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HE8550G-E-AE3-R
Public Made by Adomby adom
UTC Unisonic Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHE8550G-E-AE3-R
UTC Unisonic Tech · Bipolar (BJT) · SOT-23
HE8550G-E-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the PNP transistor (pin assignment B on the SOT-23 variant, per the ordering table); the datasheet gives no pin-specific electrical limit for the base, and the device ratings are VEBO -6 V and VCBO -40 V. |
| 2 | E | passive | Emitter terminal of the PNP transistor (pin assignment E on the SOT-23 variant, per the ordering table); the datasheet gives no pin-specific electrical limit for the emitter, and the device rating is VEBO -6 V. |
| 3 | C | passive | Collector terminal of the PNP transistor (pin assignment C on the SOT-23 variant, per the ordering table); the device is rated for collector current IC -1.5 A, VCEO -25 V, and total collector dissipation 350 mW in SOT-23. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC=-100μA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -25 | V | IC=-2mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -6 | V | IE=-100μA, IC=0 | 2 | ||
| Collector Cut-Off Current | ICBO | -100 | nA | VCB=-35V, IE=0 | 2 | ||
| Emitter Cut-Off Current | IEBO | -100 | nA | VEB=-6V, IC=0 | 2 | ||
| DC Current Gain | hFE1 | 45 | 170 | VCE=-1V, IC=-5mA | 2 | ||
| DC Current Gain | hFE2 | 85 | 160 | 500 | VCE=-1V, IC=-100mA | 2 | |
| DC Current Gain | hFE3 | 40 | 80 | VCE=-1V, IC=-800mA | 2 | ||
| DC Current Gain hFE2 rank E range (classification table) | hFE2 | 250 | 500 | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.28 | -0.5 | V | IC=-800mA, IB=-80mA | 2 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | -0.98 | -1.2 | V | IC=-800mA, IB=-80mA | 2 | |
| Base-Emitter Voltage | VBE | -0.66 | -1 | V | VCE=-1V,IC=-10mA | 2 | |
| Current Gain Bandwidth Product | fT | 100 | 190 | MHz | VCE=-10V,IC=-50mA | 2 | |
| Output Capacitance | Cob | 9 | pF | VCB=-10V, IE=0 f=1MHz | 2 | ||
| Collector Dissipation (SOT-23 package) | PC | 350 | mW | SOT-23 package | 2 | ||
| Collector-Base Voltage | VCBO | -40 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | -25 | V | 2 | |||
| Emitter-Base Voltage | VEBO | -6 | V | 2 | |||
| Collector Current | IC | -1.5 | A | 2 | |||
| Junction Temperature | TJ | 150 | C | 2 | |||
| Storage Temperature | TSTG | -65 | 150 | C | 2 |
CAD (KiCad official)
- Symbol:
HE8550G-E-AE3-R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
he8550g-e-ae3-r-etched.step/he8550g-e-ae3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);he8550g-e-ae3-r.step/he8550g-e-ae3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256
d49dcb27a4d69e2d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).