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HDESD3V3L2BTQ-7

Public Made by Adom

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HXY MOSFET ESD And Surge Protection (TVS/ESD), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentcircuit protectionhdesd3v3l2btq-7factory-2.0.0extractor-text
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HDESD3V3L2BTQ-7

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOT-23

HDESD3V3L2BTQ-7 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Protected line terminal 1, connected through a TVS diode to common pin 3; 3.3V reverse working voltage, 500W peak pulse (8/20us), ±30kV IEC 61000-4-2 ESD.
2 2 passive Protected line terminal 2, connected through a TVS diode to common pin 3; 3.3V reverse working voltage, 500W peak pulse (8/20us), ±30kV IEC 61000-4-2 ESD.
3 3 passive Common node of the two TVS diodes in the circuit diagram, shared with pins 1 and 2; the datasheet states the device protects one bidirectional line or two unidirectional lines.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Circuit Protection
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak pulse power (tp = 8/20 µs) PPP 500 W tp = 8/20 µs; value from Features list, table cell is blank 1
Maximum lead temperature for soldering TL 260 °C 10 s 1
Storage temperature range Tstg -55 155 °C 1
Operating temperature range Top -40 125 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 (ESD) air discharge -30 30 KV IEC61000-4-2 air discharge 1
IEC61000-4-2 (ESD) contact discharge -30 30 KV IEC61000-4-2 contact discharge 1
IEC61000-4-4 (EFT) 40 A IEC61000-4-4 (EFT) 1
Reverse working voltage VRWM 3.3 V 2
Reverse breakdown voltage VBR 3.6 V IT = 1 mA 2
Clamping voltage VC 6.5 V IRWM = 1 A, tp = 8/20 µs 2
Clamping voltage VC 18 V IRWM = 34 A, tp = 8/20 µs 2
Reverse leakage current IR 1 µA VRWM = 3.3 V 2
Junction capacitance CJ 75 pF VR = 0 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: HDESD3V3L2BTQ-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hdesd3v3l2btq-7-etched.step / hdesd3v3l2btq-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hdesd3v3l2btq-7.step / hdesd3v3l2btq-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 283c108382eea3dd, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF