component
HDESD3V3L2BTQ-7
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHDESD3V3L2BTQ-7
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOT-23
HDESD3V3L2BTQ-7 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Protected line terminal 1, connected through a TVS diode to common pin 3; 3.3V reverse working voltage, 500W peak pulse (8/20us), ±30kV IEC 61000-4-2 ESD. |
| 2 | 2 | passive | Protected line terminal 2, connected through a TVS diode to common pin 3; 3.3V reverse working voltage, 500W peak pulse (8/20us), ±30kV IEC 61000-4-2 ESD. |
| 3 | 3 | passive | Common node of the two TVS diodes in the circuit diagram, shared with pins 1 and 2; the datasheet states the device protects one bidirectional line or two unidirectional lines. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Circuit Protection |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power (tp = 8/20 µs) | PPP | 500 | W | tp = 8/20 µs; value from Features list, table cell is blank | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | 10 s | 1 | ||
| Storage temperature range | Tstg | -55 | 155 | °C | 1 | ||
| Operating temperature range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 (ESD) air discharge | -30 | 30 | KV | IEC61000-4-2 air discharge | 1 | ||
| IEC61000-4-2 (ESD) contact discharge | -30 | 30 | KV | IEC61000-4-2 contact discharge | 1 | ||
| IEC61000-4-4 (EFT) | 40 | A | IEC61000-4-4 (EFT) | 1 | |||
| Reverse working voltage | VRWM | 3.3 | V | 2 | |||
| Reverse breakdown voltage | VBR | 3.6 | V | IT = 1 mA | 2 | ||
| Clamping voltage | VC | 6.5 | V | IRWM = 1 A, tp = 8/20 µs | 2 | ||
| Clamping voltage | VC | 18 | V | IRWM = 34 A, tp = 8/20 µs | 2 | ||
| Reverse leakage current | IR | 1 | µA | VRWM = 3.3 V | 2 | ||
| Junction capacitance | CJ | 75 | pF | VR = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
HDESD3V3L2BTQ-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hdesd3v3l2btq-7-etched.step/hdesd3v3l2btq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hdesd3v3l2btq-7.step/hdesd3v3l2btq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
283c108382eea3dd, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).