component
HD1H15A
Public Made by Adomby adom
HL Haolin Elec MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HD1H15A
HL Haolin Elec · MOSFETs · TO-252-2(DPAK)
HD1H15A from HL Haolin Elec, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet limits gate-source voltage VGSS to ±20 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; the datasheet rates drain-source voltage VDSS at 100 V. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the datasheet rates diode continuous forward current IS at 3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL Haolin Elec |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 2.8 | A | TC=70°C | 2 | ||
| Continuous Drain Current | ID | 3.5 | A | TC=25°C | 2 | ||
| 300us Pulsed Drain Current | IDM | 14 | A | 300us pulse, tested | 2 | ||
| Diode Continuous Forward Current | IS | 3 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS=VGS,ID=250uA | 2 |
| Gate Leakage Current | IGSS | -10 | 10 | uA | VGS=±16V, VDS=0V | 2 | |
| Drain-Source On-Resistance | RDS(on) | 85 | 105 | mΩ | VGS=10V, ID=3.5A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 135 | 175 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Diode Forward Voltage | VSD | 0.6 | 0.8 | 1.1 | V | ISD=3A,VGS=0V | 2 |
| Turn-On Delay Time | td(on) | 8 | 15 | ns | VDD=30V, RL=30Ω, ID=1A, VGEN=10V, RG=6Ω | 2 | |
| Turn-On Rise Time | tr | 6 | 11 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 40 | 75 | ns | 2 | ||
| Turn-Off Fall Time | tf | 24 | 45 | ns | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V,ID=250uA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=80V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | uA | VDS=80V,VGS=0V; TJ=85°C | 2 | ||
| Reverse Recovery Time | trr | 36 | ns | ISD=15A, dISD/dt=100A/us | 2 | ||
| Reverse Recovery Charge | Qrr | 50 | nC | 2 | |||
| Input Capacitance | Ciss | 900 | pF | VGS=0V, VDS=30V, Frequency=1MHz | 2 | ||
| Output Capacitance | Coss | 60 | pF | VGS=0V, VDS=30V, Frequency=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | VGS=0V, VDS=30V, Frequency=1MHz | 2 | ||
| Total Gate Charge | Qg | 20 | nC | VDS=50V, VGS=10V, ID=15A | 2 | ||
| Gate-Source Charge | Qgs | 3 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 3.1 | nC | 2 |
CAD (KiCad official)
- Symbol:
HD1H15A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
hd1h15a-etched.step/hd1h15a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hd1h15a.step/hd1h15a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL Haolin Elec datasheet (8 pp, sha256
0aafccc730d09a42, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HD1H15A
**HL Haolin Elec** · MOSFETs · TO-252-2(DPAK)
HD1H15A from HL Haolin Elec, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet limits gate-source voltage VGSS to ±20 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; the datasheet rates drain-source voltage VDSS at 100 V. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the datasheet rates diode continuous forward current IS at 3 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL Haolin Elec |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 100 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | 2.8 | A | TC=70°C | 2 |
| Continuous Drain Current | ID | | | 3.5 | A | TC=25°C | 2 |
| 300us Pulsed Drain Current | IDM | | | 14 | A | 300us pulse, tested | 2 |
| Diode Continuous Forward Current | IS | | | 3 | A | | 2 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 2 |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS=VGS,ID=250uA | 2 |
| Gate Leakage Current | IGSS | -10 | | 10 | uA | VGS=±16V, VDS=0V | 2 |
| Drain-Source On-Resistance | RDS(on) | | 85 | 105 | mΩ | VGS=10V, ID=3.5A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 135 | 175 | mΩ | VGS=4.5V, ID=2A | 2 |
| Diode Forward Voltage | VSD | 0.6 | 0.8 | 1.1 | V | ISD=3A,VGS=0V | 2 |
| Turn-On Delay Time | td(on) | | 8 | 15 | ns | VDD=30V, RL=30Ω, ID=1A, VGEN=10V, RG=6Ω | 2 |
| Turn-On Rise Time | tr | | 6 | 11 | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 40 | 75 | ns | | 2 |
| Turn-Off Fall Time | tf | | 24 | 45 | ns | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | | 100 | | V | VGS=0V,ID=250uA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | 1 | | uA | VDS=80V,VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | 30 | | uA | VDS=80V,VGS=0V; TJ=85°C | 2 |
| Reverse Recovery Time | trr | | 36 | | ns | ISD=15A, dISD/dt=100A/us | 2 |
| Reverse Recovery Charge | Qrr | | 50 | | nC | | 2 |
| Input Capacitance | Ciss | | 900 | | pF | VGS=0V, VDS=30V, Frequency=1MHz | 2 |
| Output Capacitance | Coss | | 60 | | pF | VGS=0V, VDS=30V, Frequency=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 40 | | pF | VGS=0V, VDS=30V, Frequency=1MHz | 2 |
| Total Gate Charge | Qg | | 20 | | nC | VDS=50V, VGS=10V, ID=15A | 2 |
| Gate-Source Charge | Qgs | | 3 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 3.1 | | nC | | 2 |
## CAD (KiCad official)
- Symbol: `HD1H15A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `hd1h15a-etched.step` / `hd1h15a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hd1h15a.step` / `hd1h15a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HL Haolin Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588909918413447168) (8 pp, sha256 `0aafccc730d09a42`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hd1h15a-datasheet.pdf)