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HD1H15A

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HL Haolin Elec MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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HD1H15A

HL Haolin Elec · MOSFETs · TO-252-2(DPAK)

HD1H15A from HL Haolin Elec, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the datasheet limits gate-source voltage VGSS to ±20 V.
2 Drain passive Drain terminal of the N-channel MOSFET; the datasheet rates drain-source voltage VDSS at 100 V.
3 Source passive Source terminal of the N-channel MOSFET; the datasheet rates diode continuous forward current IS at 3 A.

Key specifications

Parameter Value
Manufacturer HL Haolin Elec
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 2.8 A TC=70°C 2
Continuous Drain Current ID 3.5 A TC=25°C 2
300us Pulsed Drain Current IDM 14 A 300us pulse, tested 2
Diode Continuous Forward Current IS 3 A 2
Operating Junction Temperature TJ 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Gate Threshold Voltage VGS(th) 1.5 2 2.5 V VDS=VGS,ID=250uA 2
Gate Leakage Current IGSS -10 10 uA VGS=±16V, VDS=0V 2
Drain-Source On-Resistance RDS(on) 85 105 mΩ VGS=10V, ID=3.5A 2
Drain-Source On-Resistance RDS(on) 135 175 mΩ VGS=4.5V, ID=2A 2
Diode Forward Voltage VSD 0.6 0.8 1.1 V ISD=3A,VGS=0V 2
Turn-On Delay Time td(on) 8 15 ns VDD=30V, RL=30Ω, ID=1A, VGEN=10V, RG=6Ω 2
Turn-On Rise Time tr 6 11 ns 2
Turn-Off Delay Time td(off) 40 75 ns 2
Turn-Off Fall Time tf 24 45 ns 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V,ID=250uA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=80V,VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 uA VDS=80V,VGS=0V; TJ=85°C 2
Reverse Recovery Time trr 36 ns ISD=15A, dISD/dt=100A/us 2
Reverse Recovery Charge Qrr 50 nC 2
Input Capacitance Ciss 900 pF VGS=0V, VDS=30V, Frequency=1MHz 2
Output Capacitance Coss 60 pF VGS=0V, VDS=30V, Frequency=1MHz 2
Reverse Transfer Capacitance Crss 40 pF VGS=0V, VDS=30V, Frequency=1MHz 2
Total Gate Charge Qg 20 nC VDS=50V, VGS=10V, ID=15A 2
Gate-Source Charge Qgs 3 nC 2
Gate-Drain Charge Qgd 3.1 nC 2

CAD (KiCad official)

  • Symbol: HD1H15A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: hd1h15a-etched.step / hd1h15a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hd1h15a.step / hd1h15a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL Haolin Elec datasheet (8 pp, sha256 0aafccc730d09a42, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF