# HCESD1006LC5VBS

**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HCESD1006LC5VBS from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal of the bi-directional protected line, with a stand-off voltage of 5 V and a typical capacitance of 2.5 pF, per the datasheet features. |
| 2 | 2 | passive | Terminal of the bi-directional protected line, with a stand-off voltage of 5 V and a typical capacitance of 2.5 pF, per the datasheet features. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power (tp = 8/20 µs) | PPP |  |  | 30 | W | tp = 8/20 µs | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10s | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| IEC61000-4-2 (ESD) air discharge | KV | -10 |  | 10 | kV | air discharge | 1 |
| IEC61000-4-2 (ESD) contact discharge | KV | -15 |  | 15 | kV | contact discharge | 1 |
| Reverse stand-off voltage | VRWM |  |  | 5 | V |  | 2 |
| Reverse leakage current | IR |  |  | 1 | µA | @ VRWM | 2 |
| Breakdown voltage | VBR | 5.5 |  |  | V | @ IT = 1 mA, pulse test | 2 |
| Maximum peak pulse current | IPP |  |  | 10 | A |  | 2 |
| Clamping voltage | VC |  |  | 8.5 | V | @ IPP | 2 |
| Peak pulse power (electrical table) | PPK |  |  | 30 | W |  | 2 |
| Line capacitance | C |  | 2.5 |  | pF | VR=0V, f=1MHz | 2 |

## CAD (KiCad official)

- Symbol: `HCESD1006LC5VBS`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hcesd1006lc5vbs-etched.step` / `hcesd1006lc5vbs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hcesd1006lc5vbs.step` / `hcesd1006lc5vbs.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hcesd1006lc5vbs-datasheet.pdf) (5 pp, sha256 `20ed951c7222f272`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hcesd1006lc5vbs-datasheet.pdf)