component
HCESD1006LC5VBS
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 5d ago |
| hcesd1006lc5vbs-etched.glb | 12d ago |
| hcesd1006lc5vbs-etched.step | 12d ago |
| hcesd1006lc5vbs-hero.glb | 12d ago |
| hcesd1006lc5vbs-hero.overlay.json | 12d ago |
| hcesd1006lc5vbs.glb | 12d ago |
| hcesd1006lc5vbs.kicad_mod | 12d ago |
| hcesd1006lc5vbs.kicad_sym | 5d ago |
| hcesd1006lc5vbs.lbr | 5d ago |
| hcesd1006lc5vbs.step | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
HCESD1006LC5VBS
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HCESD1006LC5VBS from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal of the bi-directional protected line, with a stand-off voltage of 5 V and a typical capacitance of 2.5 pF, per the datasheet features. |
| 2 | 2 | passive | Terminal of the bi-directional protected line, with a stand-off voltage of 5 V and a typical capacitance of 2.5 pF, per the datasheet features. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power (tp = 8/20 µs) | PPP | 30 | W | tp = 8/20 µs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 (ESD) air discharge | KV | -10 | 10 | kV | air discharge | 1 | |
| IEC61000-4-2 (ESD) contact discharge | KV | -15 | 15 | kV | contact discharge | 1 | |
| Reverse stand-off voltage | VRWM | 5 | V | 2 | |||
| Reverse leakage current | IR | 1 | µA | @ VRWM | 2 | ||
| Breakdown voltage | VBR | 5.5 | V | @ IT = 1 mA, pulse test | 2 | ||
| Maximum peak pulse current | IPP | 10 | A | 2 | |||
| Clamping voltage | VC | 8.5 | V | @ IPP | 2 | ||
| Peak pulse power (electrical table) | PPK | 30 | W | 2 | |||
| Line capacitance | C | 2.5 | pF | VR=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
HCESD1006LC5VBS - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hcesd1006lc5vbs-etched.step/hcesd1006lc5vbs-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hcesd1006lc5vbs.step/hcesd1006lc5vbs.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
20ed951c7222f272, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).