component
HCD65R600
Public Made by Adomby adom
HUAKE MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "hcd65r600",
"title": "HCD65R600",
"brief": "HUAKE MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"hcd65r600",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "HCD65R600",
"manufacturer": "HUAKE",
"package": "TO-252",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8597552948343943168",
"parts": {
"symbol": "hcd65r600.kicad_sym",
"footprint": "hcd65r600.kicad_mod",
"model_3d": "hcd65r600-hero.glb",
"model_3d_plain": "hcd65r600-etched.glb",
"model_3d_step": "hcd65r600-etched.step",
"model_3d_step_plain": "hcd65r600.step",
"lbr": "hcd65r600.lbr"
},
"distributor_links": {
"lcsc": "C19725798"
},
"distributor_check": {
"checked_at": "2026-10-18T11:05:15Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate; gate-source voltage is rated ±30 V, with a threshold of 2.0 to 4.0 V at VDS=VGS, ID=250μA."
},
{
"number": "2",
"name": "D",
"type": "passive",
"description": "Drain, connected to the exposed tab (and center position); drain-source voltage is rated 650 V and continuous drain current 7.0 A at Tc=25C."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source; the maximum continuous body-diode forward current is 7.0 A and the pulsed value is 28 A."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet pictogram on page 1 labels the leads G and S, and labels D on the tab. No pin numbers ; The package drawing on page 5 shows a center lead position, but the page 1 picture shows only two le",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 6,
"cost_usd": 0.2429,
"at": "2026-10-18T11:03:05"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8597552948343943168",
"pages": 6,
"sha256": "6618609ee0e1c275",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "hcd65r600.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "hcd65r600-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "e6787d9893788ef2cb6916132fe3eef2c23df7ec452f5a121d6f15c66cdea33a",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "HUAKE",
"Package": "TO-252",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "6618609ee0e1c275cc35d0cc94dcd74d00091a8b895297861a3bec532866d4e7",
"rows": [
{
"name": "Drain-source Breakdown Voltage",
"symbol": "BVDSS",
"kind": "electrical",
"unit": "V",
"min": 650,
"typ": null,
"max": null,
"conditions": "VGS=0V, ID=250uA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 2,
"typ": null,
"max": 4,
"conditions": "VDS= VGS, ID=250uA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Static Drain-Source On-Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 520,
"max": 600,
"conditions": "VGS=10 V, ID=3.5A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS=650V,VGS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": null,
"max": 10,
"conditions": "VDS=520V,Tc=125C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Body Leakage Current, Forward",
"symbol": "IGSSF",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": null,
"max": 100,
"conditions": "VGS=+30V, VDS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Body Leakage Current, Reverse",
"symbol": "IGSSR",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": null,
"max": -100,
"conditions": "VGS=-30V, VDS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Maximum Continuous Drain-Source Diode Forward Current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 7,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Maximum Pulsed Drain-Source Diode Forward Current",
"symbol": "ISM",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 28,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Diode Forward Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.4,
"conditions": "VGS =0V, IS=7.0A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Voltage",
"symbol": "VDSS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 650,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain Current - Continuous",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 7,
"conditions": "Tc=25C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain Current - Continuous",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 4.43,
"conditions": "Tc=100C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain Current - Pulsed",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 28,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage",
"symbol": "VGSS",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": 30,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single Pulsed Avalanche Energy (Limit Reference Value)",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 175,
"conditions": "Note2",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche Current",
"symbol": "IAR",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 3.5,
"conditions": "Note1",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Repetitive Avalanche Energy",
"symbol": "EAR",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 3.9,
"conditions": "Note1",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Peak Diode Recovery dv/dt",
"symbol": "dv/dt",
"kind": "absolute_maximum",
"unit": "V/ns",
"min": null,
"typ": null,
"max": 8.5,
"conditions": "Note3",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 80,
"conditions": "TC =25C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power Dissipation derating",
"symbol": "",
"kind": "thermal",
"unit": "W/C",
"min": null,
"typ": null,
"max": 0.64,
"conditions": "Derate above 25C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction Temperature",
"symbol": "Tj",
"kind": "absolute_maximum",
"unit": "C",
"min": null,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Storage Temperature Range",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Thermal Resistance, Junction to Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "C /W",
"min": null,
"typ": null,
"max": 1.56,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Thermal Resistance, Junction to Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "C /W",
"min": null,
"typ": null,
"max": 69,
"conditions": "",
"source_page": 1,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"hcd65r600"
],
"discovery_pitch": "HCD65R600 (HUAKE) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"hcd65r600.kicad_sym",
"hcd65r600.kicad_mod",
"hcd65r600.glb",
"hcd65r600.step",
"hcd65r600.lbr",
"docs/hero.png",
"docs/hcd65r600-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"hcd65r600-hero.glb",
"hcd65r600-hero.overlay.json",
"hcd65r600-etched.glb"
],
"visibility": {
"public": true
}
}