component
HCD65R600
Public Made by Adomby adom
HUAKE MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHCD65R600
HUAKE · MOSFETs · TO-252
HCD65R600 from HUAKE, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±30 V, with a threshold of 2.0 to 4.0 V at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain, connected to the exposed tab (and center position); drain-source voltage is rated 650 V and continuous drain current 7.0 A at Tc=25C. |
| 3 | S | passive | Source; the maximum continuous body-diode forward current is 7.0 A and the pulsed value is 28 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAKE |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS= VGS, ID=250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 520 | 600 | mΩ | VGS=10 V, ID=3.5A | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=650V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=520V,Tc=125C | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 7 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 28 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS =0V, IS=7.0A | 2 | ||
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current - Continuous | ID | 7 | A | Tc=25C | 1 | ||
| Drain Current - Continuous | ID | 4.43 | A | Tc=100C | 1 | ||
| Drain Current - Pulsed | IDM | 28 | A | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy (Limit Reference Value) | EAS | 175 | mJ | Note2 | 1 | ||
| Avalanche Current | IAR | 3.5 | A | Note1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 3.9 | mJ | Note1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 8.5 | V/ns | Note3 | 1 | ||
| Power Dissipation | PD | 80 | W | TC =25C | 1 | ||
| Power Dissipation derating | 0.64 | W/C | Derate above 25C | 1 | |||
| Operating Junction Temperature | Tj | 150 | C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.56 | C /W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 69 | C /W | 1 |
CAD (KiCad official)
- Symbol:
HCD65R600 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hcd65r600-etched.step/hcd65r600-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hcd65r600.step/hcd65r600.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAKE datasheet (6 pp, sha256
6618609ee0e1c275, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).