HC6D04065E

{
  "slug": "hc6d04065e",
  "version": "0.1.0",
  "type": "component",
  "description": "HXY MOSFET SiC Diodes, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
    "component",
    "silicon carbide (sic) devices",
    "hc6d04065e",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
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    "README.md",
    "hc6d04065e.kicad_sym",
    "hc6d04065e.kicad_mod",
    "hc6d04065e.glb",
    "hc6d04065e.step",
    "hc6d04065e.lbr",
    "docs/hero.png",
    "docs/hc6d04065e-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "hc6d04065e-hero.glb",
    "hc6d04065e-hero.overlay.json",
    "hc6d04065e-etched.glb"
  ],
  "component": {
    "mpn": "HC6D04065E",
    "manufacturer": "HXY MOSFET",
    "package": "TO-252-2L",
    "pin_count": 3,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "SiC Diodes",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/51c3e9150e4743ae34d6250820558372.pdf",
    "parts": {
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      "footprint": "hc6d04065e.kicad_mod",
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      "model_3d_plain": "hc6d04065e-etched.glb",
      "model_3d_step": "hc6d04065e-etched.step",
      "model_3d_step_plain": "hc6d04065e.step",
      "lbr": "hc6d04065e.lbr"
    },
    "distributor_links": {
      "lcsc": "C42389271"
    },
    "distributor_check": {
      "checked_at": "2026-10-23T12:10:05Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "K",
        "type": "passive",
        "description": "Cathode of the SiC Schottky diode (650 V repetitive peak reverse voltage), connected internally to the case/tab per the pin diagram."
      },
      {
        "number": "2",
        "name": "A",
        "type": "passive",
        "description": "Anode of the SiC Schottky diode (4 A rated, 650 V repetitive peak reverse voltage)."
      },
      {
        "number": "3",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet pin diagram on page 1 shows PIN 1 tied to CASE and PIN 2 connected through the diode s",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 6,
        "cost_usd": 0.203,
        "at": "2026-10-23T12:09:51"
      },
      "datasheet": {
        "url": "https://datasheet.lcsc.com/datasheet/pdf/51c3e9150e4743ae34d6250820558372.pdf",
        "pages": 6,
        "sha256": "56fb1c8f1d8f947e",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
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        "zmin_mm": -0.0,
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        "footprint_binding": "identity",
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}