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HC6D04065E

Public Made by Adom

by adom

HXY MOSFET SiC Diodes, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HC6D04065E

HXY MOSFET · SiC Diodes · TO-252-2L

HC6D04065E from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SiC Schottky diode (650 V repetitive peak reverse voltage), connected internally to the case/tab per the pin diagram.
2 A passive Anode of the SiC Schottky diode (4 A rated, 650 V repetitive peak reverse voltage).
3 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Voltage VF 1.3 1.5 V IF=4A, Tj=25°C 3
Forward Voltage VF 1.55 V IF=4A, Tj=175°C 3
Reverse Current IR 10 50 μA VR=650V, Tj=25°C 3
Reverse Current IR 40 150 μA VR=650V, Tj=175°C 3
Repetitive Peak Reverse Voltage VRRM 650 V Tj=25°C 2
Surge Peak Reverse Voltage VRSM 650 V Tj=25°C 2
DC Peak Reverse Voltage VR 650 V Tj=25°C 2
Continuous Forward Current IF 14 A TC = 25°C 2
Continuous Forward Current IF 7 A TC = 135°C 2
Continuous Forward Current IF 4 A TC = 160°C 2
Repetitive Peak Forward Surge Current IFRM 23 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Repetitive Peak Forward Surge Current IFRM 15 A TC = 110°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 36 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 28 A TC = 110°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 6.5 A²s TC = 25°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 3.9 A²s TC = 110°C, tp=10ms, Half Sine Pulse 2
Power dissipation Ptot 51 W TC = 25°C 2
Power dissipation Ptot 22 W TC = 110°C 2
Operating junction Range Tj -55 175 °C 2
Storage temperature Range Tstg -55 150 °C 2
Thermal resistance, junction, case RthJC 2.9 °C/W 2
Total Capacitance C 203 pF Tj=25℃, f=1MHz, VR=0V 3
Total Capacitance C 21 pF Tj=25℃, f=1MHz, VR=200V 3
Total Capacitance C 16 pF Tj=25℃, f=1MHz, VR=400V 3
Total Capacitive Charge QC 10.6 nC 3

CAD (KiCad official)

  • Symbol: HC6D04065E
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hc6d04065e-etched.step / hc6d04065e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hc6d04065e.step / hc6d04065e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 56fb1c8f1d8f947e, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF