HC3D05120E

{
  "schema_version": 1,
  "type": "component",
  "slug": "hc3d05120e",
  "title": "HC3D05120E",
  "brief": "HXY MOSFET SiC Diodes, TO-252-2L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "silicon carbide (sic) devices",
    "hc3d05120e"
  ],
  "component": {
    "mpn": "HC3D05120E",
    "manufacturer": "HXY MOSFET",
    "package": "TO-252-2L",
    "pin_count": 3,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "SiC Diodes",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603011182702325760",
    "parts": {
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      "footprint": "hc3d05120e.kicad_mod",
      "model_3d": "hc3d05120e-etched.glb",
      "model_3d_plain": "hc3d05120e.glb",
      "model_3d_step": "hc3d05120e-etched.step",
      "model_3d_step_plain": "hc3d05120e.step",
      "lbr": "hc3d05120e.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "A",
        "type": "passive",
        "description": "Anode of the SiC Schottky diode. Connect to the positive terminal of the reverse-biased circuit; conducts forward current up to IF = 18 A (TC = 25 °C)."
      },
      {
        "number": "2",
        "name": "K",
        "type": "passive",
        "description": "Cathode of the SiC Schottky diode. Electrically common with the exposed metal tab/CASE. Rated VRRM = 1200 V."
      },
      {
        "number": "TAB",
        "name": "K/CASE",
        "type": "passive",
        "description": "Exposed metal tab / CASE, electrically the cathode. Also serves as the primary thermal path (RthJC = 1.55 °C/W)."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603011182702325760",
        "pages": 6,
        "sha256": "7ce14c5543467849",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
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        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "23f543e52804c969441bf0d65494d104bc1dca96cd94e920cbde11e355ebede5",
        "checked": "2026-10-16",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "TO-252-2L",
      "Category": "Silicon Carbide (SiC) Devices",
      "Pins": "3"
    }
  },
  "variants": [
    {
      "mpn": "HC3D05120E",
      "kind": "packaging"
    }
  ],
  "sections": [
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  "discovery_triggers": [
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  "discovery_pitch": "HC3D05120E (HXY MOSFET) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
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    "hc3d05120e.step",
    "hc3d05120e.lbr",
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  "visibility": {
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  },
  "updated_at": "2026-09-24T21:34:12.348Z"
}