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HC3D05120E

Public Made by Adom

by adom

HXY MOSFET SiC Diodes, TO-252-2L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshc3d05120e
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HC3D05120E

HXY MOSFET · SiC Diodes · TO-252-2L

HC3D05120E from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the SiC Schottky diode. Connect to the positive terminal of the reverse-biased circuit; conducts forward current up to IF = 18 A (TC = 25 °C).
2 K passive Cathode of the SiC Schottky diode. Electrically common with the exposed metal tab/CASE. Rated VRRM = 1200 V.
TAB K/CASE passive Exposed metal tab / CASE, electrically the cathode. Also serves as the primary thermal path (RthJC = 1.55 °C/W).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Silicon Carbide (SiC) Devices
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • HC3D05120E

CAD (KiCad official)

  • Symbol: HC3D05120E
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hc3d05120e-etched.step / hc3d05120e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hc3d05120e.step / hc3d05120e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 7ce14c5543467849, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF