# HC3D05120E

**HXY MOSFET** · SiC Diodes · TO-252-2L

HC3D05120E from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the SiC Schottky diode. Connect to the positive terminal of the reverse-biased circuit; conducts forward current up to IF = 18 A (TC = 25 °C). |
| 2 | K | passive | Cathode of the SiC Schottky diode. Electrically common with the exposed metal tab/CASE. Rated VRRM = 1200 V. |
| TAB | K/CASE | passive | Exposed metal tab / CASE, electrically the cathode. Also serves as the primary thermal path (RthJC = 1.55 °C/W). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |

## Ordering variants

Same part, different packaging or reel option.

- `HC3D05120E`

## CAD (KiCad official)

- Symbol: `HC3D05120E`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `hc3d05120e-etched.step` / `hc3d05120e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hc3d05120e.step` / `hc3d05120e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603011182702325760) (6 pp, sha256 `7ce14c5543467849`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hc3d05120e-datasheet.pdf)