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HC3D02120E

Public Made by Adom

by adom

HXY MOSFET SiC Diodes, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HC3D02120E

HXY MOSFET · SiC Diodes · TO-252-2L

HC3D02120E from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SiC Schottky diode, internally connected to the case/tab (VR and VRRM rated 1200 V).
2 A passive Anode of the SiC Schottky diode (continuous forward current IF 10 A at TC=25°C, 5 A at 135°C, 2 A at 160°C).
3 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Forward Current IF 10 A TC = 25°C 2
Continuous Forward Current IF 5 A TC = 135°C 2
Continuous Forward Current IF 2 A TC = 160°C 2
DC Peak Reverse Voltage VR 1200 V 2
Repetitive Peak Reverse Voltage VRRM 1200 V 2
Surge Peak Reverse Voltage VRSM 1200 V 2
Power dissipation Ptot 60 W TC = 25°C 2
Power dissipation Ptot 26 W TC = 110°C 2
i²dt value i²dt 2.8 A²s TC = 25°C, tp=10ms, Half Sine Pulse 2
i²dt value i²dt 1.8 A²s TC = 110°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 24 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 19 A TC = 110°C, tp=10ms, Half Sine Pulse 2
Repetitive Peak Forward Surge Current IFRM 18 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Repetitive Peak Forward Surge Current IFRM 13 A TC = 110°C, tp=10ms, Half Sine Pulse 2
Operating junction Range Tj -55 175 °C 2
Storage temperature Range Tstg -55 150 °C 2
Thermal resistance, junction, case RthJC 2.5 °C/W junction, case 2
Forward Voltage VF 1.35 1.75 V IF=2A, Tj=25°C 3
Total Capacitance C 165 pF Tj=25℃, f=1MHz, VR=0V 3
Total Capacitance C 12 pF Tj=25℃, f=1MHz, VR=400V 3
Total Capacitance C 9 pF Tj=25℃, f=1MHz, VR=800V 3

CAD (KiCad official)

  • Symbol: HC3D02120E
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hc3d02120e-etched.step / hc3d02120e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hc3d02120e.step / hc3d02120e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 845a619afaf3e09c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF