component
HC3D02120E
Public Made by Adomby adom
HXY MOSFET SiC Diodes, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| hc3d02120e-etched.glb | 8d ago |
| hc3d02120e-etched.step | 8d ago |
| hc3d02120e-hero.glb | 8d ago |
| hc3d02120e-hero.overlay.json | 8d ago |
| hc3d02120e.glb | 8d ago |
| hc3d02120e.kicad_mod | 8d ago |
| hc3d02120e.kicad_sym | 8d ago |
| hc3d02120e.lbr | 8d ago |
| hc3d02120e.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
HC3D02120E
HXY MOSFET · SiC Diodes · TO-252-2L
HC3D02120E from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the SiC Schottky diode, internally connected to the case/tab (VR and VRRM rated 1200 V). |
| 2 | A | passive | Anode of the SiC Schottky diode (continuous forward current IF 10 A at TC=25°C, 5 A at 135°C, 2 A at 160°C). |
| 3 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Forward Current | IF | 10 | A | TC = 25°C | 2 | ||
| Continuous Forward Current | IF | 5 | A | TC = 135°C | 2 | ||
| Continuous Forward Current | IF | 2 | A | TC = 160°C | 2 | ||
| DC Peak Reverse Voltage | VR | 1200 | V | 2 | |||
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | 2 | |||
| Surge Peak Reverse Voltage | VRSM | 1200 | V | 2 | |||
| Power dissipation | Ptot | 60 | W | TC = 25°C | 2 | ||
| Power dissipation | Ptot | 26 | W | TC = 110°C | 2 | ||
| i²dt value | i²dt | 2.8 | A²s | TC = 25°C, tp=10ms, Half Sine Pulse | 2 | ||
| i²dt value | i²dt | 1.8 | A²s | TC = 110°C, tp=10ms, Half Sine Pulse | 2 | ||
| Non-Repetitive Forward Surge Current | IFSM | 24 | A | TC = 25°C, tp=10ms, Half Sine Pulse | 2 | ||
| Non-Repetitive Forward Surge Current | IFSM | 19 | A | TC = 110°C, tp=10ms, Half Sine Pulse | 2 | ||
| Repetitive Peak Forward Surge Current | IFRM | 18 | A | TC = 25°C, tp=10ms, Half Sine Pulse | 2 | ||
| Repetitive Peak Forward Surge Current | IFRM | 13 | A | TC = 110°C, tp=10ms, Half Sine Pulse | 2 | ||
| Operating junction Range | Tj | -55 | 175 | °C | 2 | ||
| Storage temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction, case | RthJC | 2.5 | °C/W | junction, case | 2 | ||
| Forward Voltage | VF | 1.35 | 1.75 | V | IF=2A, Tj=25°C | 3 | |
| Total Capacitance | C | 165 | pF | Tj=25℃, f=1MHz, VR=0V | 3 | ||
| Total Capacitance | C | 12 | pF | Tj=25℃, f=1MHz, VR=400V | 3 | ||
| Total Capacitance | C | 9 | pF | Tj=25℃, f=1MHz, VR=800V | 3 |
CAD (KiCad official)
- Symbol:
HC3D02120E - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hc3d02120e-etched.step/hc3d02120e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hc3d02120e.step/hc3d02120e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
845a619afaf3e09c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).