main
Ray Set visibility: public 7e21a58 10d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "hc1m40120j",
  "title": "HC1M40120J",
  "brief": "HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-263-7L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "manufacturer": "HXY MOSFET",
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    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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        "status": "no match"
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      "mouser": {
        "pn": null,
        "status": "no match"
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        "type": "input",
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      },
      {
        "number": "2",
        "name": "KS",
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      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
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      },
      {
        "number": "4",
        "name": "S",
        "type": "passive",
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      },
      {
        "number": "5",
        "name": "S",
        "type": "passive",
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      },
      {
        "number": "6",
        "name": "S",
        "type": "passive",
        "description": "Power source pin, tied together with pins 3, 4, 5 and 7."
      },
      {
        "number": "7",
        "name": "S",
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        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pin map comes from a garbled package drawing on page 1: G(1), KS(2), S(3,4,5,6,7), D(TAB). Pin 2"
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        "pages_sent": 9,
        "cost_usd": 0.0539,
        "at": "2026-10-26T19:16:51"
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        "pages": 9,
        "sha256": "4e9e539c5c9041fa",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 7,
        "described": 7,
        "cites_pages": true,
        "refuses_to_fabricate": true
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      "footprint": "viewers/footprint.html"
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        "seat": "z = 0",
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        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "9149a11780a99391a7ef49f6c6ca8a137f7e89b4943caca20f2790b630c90898",
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        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "TO-263-7L",
      "Category": "Silicon Carbide (SiC) Devices",
      "Pins": "7"
    },
    "characteristics": {
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      "datasheet_sha256": "4e9e539c5c9041fa7c58ef7c2b2188a2654e5900e4baebf625285a183fac106a",
      "rows": [
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          "max": 1200,
          "conditions": "TC = 25°C",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 65,
          "conditions": "TC = 25°C, VGS = 15V",
          "source_page": 1,
          "source": "datasheet"
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        {
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          "conditions": "TC = 100°C, VGS = 15V",
          "source_page": 1,
          "source": "datasheet"
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        {
          "name": "Pulsed drain current",
          "symbol": "ID pulse",
          "kind": "absolute_maximum",
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          "conditions": "TC = 25°C, tp limited by Tjmax",
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          "source": "datasheet"
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        {
          "name": "Gate-Source voltage",
          "symbol": "VGS",
          "kind": "recommended_operating",
          "unit": "V",
          "min": -4,
          "typ": null,
          "max": 18,
          "conditions": "",
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        },
        {
          "name": "Gate-Source voltage (absolute maximum values)",
          "symbol": "VGSmax",
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          "min": -8,
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        },
        {
          "name": "Power dissipation",
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          "unit": "W",
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          "conditions": "TC = 25°C",
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        },
        {
          "name": "Operating junction and storage temperature",
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          "min": -40,
          "typ": null,
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          "conditions": "",
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        {
          "name": "Thermal resistance, junction-case",
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          "kind": "thermal",
          "unit": "°C/W",
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          "max": 0.46,
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        {
          "name": "Thermal resistance, junction-ambient",
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          "kind": "thermal",
          "unit": "°C/W",
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        },
        {
          "name": "Drain-source breakdown voltage",
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        {
          "name": "Gate threshold voltage",
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          "min": 2.2,
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          "max": 4,
          "conditions": "VDS=VGS, ID=10mA",
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        {
          "name": "Drain-source on-state resistance",
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        {
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          "typ": 62,
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          "conditions": "VGS=15V, ID=33.3A, TJ=175°C",
          "source_page": 2,
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        {
          "name": "Transconductance",
          "symbol": "gfs",
          "kind": "electrical",
          "unit": "S",
          "min": null,
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          "max": null,
          "conditions": "VDS=20V, ID=33.3A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
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          "typ": 1,
          "max": null,
          "conditions": "VDS=1200V, VGS=0V, TC=25°C",
          "source_page": 2,
          "source": "datasheet"
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  "discovery_triggers": [
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  "discovery_pitch": "HC1M40120J (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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