component
HC1M40120J
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-263-7L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHC1M40120J
HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-263-7L
HC1M40120J from HXY MOSFET, in a TO-263-7L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage absolute maximum is -8/+22 V, with recommended drive of -4/+18 V. |
| 2 | KS | passive | Kelvin source (separate driver source) pin used as the gate-drive return to reduce switching losses and gate ringing. |
| 3 | S | passive | Power source pin, tied together with pins 4, 5, 6 and 7. |
| 4 | S | passive | Power source pin, tied together with pins 3, 5, 6 and 7. |
| 5 | S | passive | Power source pin, tied together with pins 3, 4, 6 and 7. |
| 6 | S | passive | Power source pin, tied together with pins 3, 4, 5 and 7. |
| 7 | S | passive | Power source pin, tied together with pins 3, 4, 5 and 6. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-263-7L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 1200 | V | TC = 25°C | 1 | ||
| Continuous drain current | ID | 65 | A | TC = 25°C, VGS = 15V | 1 | ||
| Continuous drain current | ID | 46 | A | TC = 100°C, VGS = 15V | 1 | ||
| Pulsed drain current | ID pulse | 120 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Gate-Source voltage | VGS | -4 | 18 | V | 1 | ||
| Gate-Source voltage (absolute maximum values) | VGSmax | -8 | 22 | V | 1 | ||
| Power dissipation | Ptot | 326 | W | TC = 25°C | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -40 | 175 | °C | 1 | ||
| Thermal resistance, junction-case | RthJC | 0.46 | °C/W | 2 | |||
| Thermal resistance, junction-ambient | RthJA | 40 | °C/W | 2 | |||
| Drain-source breakdown voltage | BVDSS | 1200 | V | VGS=0V, ID=100uA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 4 | V | VDS=VGS, ID=10mA | 2 |
| Drain-source on-state resistance | RDS(on) | 32 | 40 | mΩ | VGS=18V, ID=33.3A, TJ=25°C | 2 | |
| Drain-source on-state resistance | RDS(on) | 40 | 52 | mΩ | VGS=15V, ID=33.3A, TJ=25°C | 2 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=18V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 59 | mΩ | VGS=18V, ID=33.3A, TJ=175°C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 62 | mΩ | VGS=15V, ID=33.3A, TJ=175°C | 2 | ||
| Transconductance | gfs | 5 | S | VDS=20V, ID=33.3A | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=1200V, VGS=0V, TC=25°C | 2 |
CAD (KiCad official)
- Symbol:
HC1M40120J - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin4 - 3D model: TO-263-7L (KiCad packages3D, STEP)
- 3D model files:
hc1m40120j-etched.step/hc1m40120j-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hc1m40120j.step/hc1m40120j.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (9 pp, sha256
4e9e539c5c9041fa, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).