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HAQHV24-01ETG-C

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HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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HAQHV24-01ETG-C

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HAQHV24-01ETG-C from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bi-directional ESD protection diode protecting one I/O line, with 24V reverse working voltage and ±15kV contact ESD rating.
2 2 passive Other terminal of the bi-directional ESD protection diode protecting one I/O line, with 24V reverse working voltage and ±15kV contact ESD rating.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power (tp = 8/20 μs) PPP 300 W tp = 8/20 μs 1
Maximum lead temperature for soldering TL 260 °C 10 s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
ESD contact discharge (IEC61000-4-2) -15 15 kV IEC61000-4-2 contact discharge 1
ESD air discharge (IEC61000-4-2) -20 20 kV IEC61000-4-2 air discharge 1
EFT (IEC61000-4-4) 40 A IEC61000-4-4, 5/50 ns 1
Reverse Breakdown Voltage VBR 26.5 V IT = 1mA 2
Reverse Leakage Current IR 0.1 μA VRWM = 24V 2
Clamping Voltage VC 40 V IRWM = 1A, tp = 8/20 μs 2
Clamping Voltage VC 60 V IRWM = 4A, tp = 8/20 μs 2
Junction Capacitance CJ 10 pF VR = 0V, f = 1MHz 2

CAD (KiCad official)

  • Symbol: HAQHV24-01ETG-C
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: haqhv24-01etg-c-etched.step / haqhv24-01etg-c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); haqhv24-01etg-c.step / haqhv24-01etg-c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 f5e0a801c122f815, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF