component
HAQHV24-01ETG-C
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHAQHV24-01ETG-C
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HAQHV24-01ETG-C from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode protecting one I/O line, with 24V reverse working voltage and ±15kV contact ESD rating. |
| 2 | 2 | passive | Other terminal of the bi-directional ESD protection diode protecting one I/O line, with 24V reverse working voltage and ±15kV contact ESD rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 μs) | PPP | 300 | W | tp = 8/20 μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | 10 s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD contact discharge (IEC61000-4-2) | -15 | 15 | kV | IEC61000-4-2 contact discharge | 1 | ||
| ESD air discharge (IEC61000-4-2) | -20 | 20 | kV | IEC61000-4-2 air discharge | 1 | ||
| EFT (IEC61000-4-4) | 40 | A | IEC61000-4-4, 5/50 ns | 1 | |||
| Reverse Breakdown Voltage | VBR | 26.5 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 0.1 | μA | VRWM = 24V | 2 | ||
| Clamping Voltage | VC | 40 | V | IRWM = 1A, tp = 8/20 μs | 2 | ||
| Clamping Voltage | VC | 60 | V | IRWM = 4A, tp = 8/20 μs | 2 | ||
| Junction Capacitance | CJ | 10 | pF | VR = 0V, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
HAQHV24-01ETG-C - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
haqhv24-01etg-c-etched.step/haqhv24-01etg-c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);haqhv24-01etg-c.step/haqhv24-01etg-c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
f5e0a801c122f815, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).