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HAOTF8N65

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HAOTF8N65

HXY MOSFET · MOSFETs · TO-220F

HAOTF8N65 from HXY MOSFET, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, rated for a gate-source voltage of +30 V (VGS) per the absolute maximum ratings.
2 D passive Drain terminal, rated for a drain-source voltage of 650 V and a continuous drain current of 10 A at TC=25℃.
3 S passive Source terminal, the reference for VGS and VDS, with the body diode rated for 10 A continuous source current.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS 30 V 1
Drain Current ID@TC=25℃ 10 A VGS @ 4.5V 1
Drain Current ID@TC=100℃ 6.3 A VGS @ 4.5V 1
Pulsed Drain Current IDM 40 A 1
Total Power Dissipation PD@TC=25℃ 40 W 1
Single Pulse Avalanche Energy EAS 500 mJ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain to Source Breakdown Voltage VDSS 650 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS =650V, VGS= 0V, Ta = 25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS =520V, VGS= 0V, Ta = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-30V 2
Drain-to-Source On-Resistance RDS(ON) 0.86 1.05 Ω VGS=10V,ID=5A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Continuous Source Current (Body Diode) IS 10 A 3
Maximum Pulsed Current (Body Diode) ISM 40 A 3
Diode Forward Voltage VSD 1.5 V IS=10A,VGS=0V 3
Bvdss Temperature Coefficient ΔBVDSS/ΔTJ 0.7 V/℃ ID=250uA,Reference25℃ 2
Forward Transconductance gfs 9.5 S VDS=15V, ID =5A 2
Input Capacitance Ciss 1642 pF VGS = 0V VDS = 25V f = 1.0MHz 2
Output Capacitance Coss 128 pF VGS = 0V VDS = 25V f = 1.0MHz 2
Reverse Transfer Capacitance Crss 7 pF VGS = 0V VDS = 25V f = 1.0MHz 2
Turn-on Delay Time td(ON) 27 ns ID =10A VDD = 325V RG =10Ω 2
Rise Time tr 22 ns ID =10A VDD = 325V RG =10Ω 2
Turn-Off Delay Time td(OFF) 53 ns ID =10A VDD = 325V RG =10Ω 2
Fall Time tf 24 ns ID =10A VDD = 325V RG =10Ω 2
Total Gate Charge Qg 32 nC ID =10A VDD =520V VGS = 10V 2
Gate to Source Charge Qgs 8 nC ID =10A VDD =520V VGS = 10V 2
Gate to Drain (Miller) Charge Qgd 12 nC ID =10A VDD =520V VGS = 10V 2
Reverse Recovery Time trr 528 ns IS=10A,Tj = 25℃ dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Charge Qrr 3220 nC IS=10A,Tj = 25℃ dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Current IRRM 12.2 A IS=10A,Tj = 25℃ dIF/dt=100A/us, VGS=0V 3
Junction-to-Case Thermal Resistance RθJC 3.13 ℃/W 3
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W 3

CAD (KiCad official)

  • Symbol: HAOTF8N65
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (10 pp, sha256 a22424822bd46944, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF