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HAOTF8N65
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHAOTF8N65
HXY MOSFET · MOSFETs · TO-220F
HAOTF8N65 from HXY MOSFET, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal, rated for a gate-source voltage of +30 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 650 V and a continuous drain current of 10 A at TC=25℃. |
| 3 | S | passive | Source terminal, the reference for VGS and VDS, with the body diode rated for 10 A continuous source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | 30 | V | 1 | |||
| Drain Current | ID@TC=25℃ | 10 | A | VGS @ 4.5V | 1 | ||
| Drain Current | ID@TC=100℃ | 6.3 | A | VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 40 | W | 1 | |||
| Single Pulse Avalanche Energy | EAS | 500 | mJ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain to Source Breakdown Voltage | VDSS | 650 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS =650V, VGS= 0V, Ta = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS =520V, VGS= 0V, Ta = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS =-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 0.86 | 1.05 | Ω | VGS=10V,ID=5A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Continuous Source Current (Body Diode) | IS | 10 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 40 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=10A,VGS=0V | 3 | ||
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.7 | V/℃ | ID=250uA,Reference25℃ | 2 | ||
| Forward Transconductance | gfs | 9.5 | S | VDS=15V, ID =5A | 2 | ||
| Input Capacitance | Ciss | 1642 | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 128 | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 7 | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 27 | ns | ID =10A VDD = 325V RG =10Ω | 2 | ||
| Rise Time | tr | 22 | ns | ID =10A VDD = 325V RG =10Ω | 2 | ||
| Turn-Off Delay Time | td(OFF) | 53 | ns | ID =10A VDD = 325V RG =10Ω | 2 | ||
| Fall Time | tf | 24 | ns | ID =10A VDD = 325V RG =10Ω | 2 | ||
| Total Gate Charge | Qg | 32 | nC | ID =10A VDD =520V VGS = 10V | 2 | ||
| Gate to Source Charge | Qgs | 8 | nC | ID =10A VDD =520V VGS = 10V | 2 | ||
| Gate to Drain (Miller) Charge | Qgd | 12 | nC | ID =10A VDD =520V VGS = 10V | 2 | ||
| Reverse Recovery Time | trr | 528 | ns | IS=10A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Charge | Qrr | 3220 | nC | IS=10A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Current | IRRM | 12.2 | A | IS=10A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 | ||
| Junction-to-Case Thermal Resistance | RθJC | 3.13 | ℃/W | 3 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
HAOTF8N65 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (10 pp, sha256
a22424822bd46944, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).