# H2SC3357-RE

**HXY MOSFET** · Bipolar (BJT) · SOT-89

H2SC3357-RE from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet rates emitter-base voltage VEBO at 3 V maximum and gives VBE(sat) of 1.2 V at IC=50 mA, IB=5 mA. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet rates VCBO at 20 V, VCEO at 12 V, continuous collector current at 100 mA, and total power dissipation PC at 1.2 W. |
| 3 | EMITTER | passive | Emitter terminal; the datasheet rates the junction and storage temperature range at -55 to +150 ℃ and gives the emitter-base breakdown voltage V(BR)EBO as 5 V minimum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO |  |  | 12 | V | Ta=25 (maximum ratings header) | 1 |
| Collector-Base Voltage | VCBO |  |  | 20 | V | Ta=25 (maximum ratings header) | 1 |
| Emitter-Base Voltage | VEBO |  |  | 3 | V | Ta=25 (maximum ratings header) | 1 |
| Collector Current -Continuous | IC |  |  | 100 | mA | Ta=25 (maximum ratings header) | 1 |
| Collector Power Dissipation | PC |  |  | 1.2 | W | Ta=25 (maximum ratings header) | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | ℃ | Ta=25 (maximum ratings header) | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 20 |  |  | V | IC=100μA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 12 |  |  | V | IC=1mA, IB=0 (pulse test) | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=100μA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 1 | μA | VCB=20V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 1 | μA | VEB=1V, IC=0 | 1 |
| DC current gain | hFE | 50 |  |  |  | VCE=10V, IC=20mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.2 | V | IC=50mA, IB=5mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.4 | V | IC=50mA, IB=5mA | 1 |
| Transition frequency | fT |  | 6.5 |  | GHz | VCE=10V, IC=20mA | 1 |
| Thermal resistance, junction to ambient | Rth(j-a) |  | 312.5 |  | ˚C/W | Ceramic substrate 16 cm2 × 0.7 mm (t), free air | 2 |

## CAD (KiCad official)

- Symbol: `H2SC3357-RE`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `h2sc3357-re-etched.step` / `h2sc3357-re-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `h2sc3357-re.step` / `h2sc3357-re.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603010016589074432) (4 pp, sha256 `f567729f4ceb3375`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/h2sc3357-re-datasheet.pdf)