# H2SB1260T100R

**HXY MOSFET** · Bipolar (BJT) · SOT-89

H2SB1260T100R from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of this PNP power transistor, with emitter-base breakdown V(BR)EBO of -5 V minimum and VEBO rated at -5 V maximum. |
| 2 | COLLECTOR | passive | Collector terminal, rated for VCBO and VCEO of -80 V maximum and collector power dissipation PC of 500 mW; the collector current rating is not legible in the extracted text. |
| 3 | EMITTER | passive | Emitter terminal, rated for VEBO of -5 V maximum, and the reference for the VCE(sat) of -0.4 V at IC=-500 mA, IB=-50 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | -80 | V | Ta=25 (table header) | 1 |
| Collector-Emitter Voltage | VCEO |  |  | -80 | V | Ta=25 (table header) | 1 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V | Ta=25 (table header) | 1 |
| Collector Power Dissipation | PC |  |  | 500 | mW | Ta=25 (table header) | 1 |
| Thermal Resistance From Junction To Ambient | RΘJA |  |  | 250 | ℃/W |  | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | -80 |  |  | V | Ta=25; IC=-50 A, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -80 |  |  | V | Ta=25; IC=-1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | Ta=25; IE=-50 A, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | -1 | μA | Ta=25; VCB=-60V, IE=0 | 1 |
| Emitter cut-off current (row labeled Emitter-base breakdown voltage) | IEBO |  |  | -0.1 | µA | Ta=25; VEB=-4V, IC=0 | 1 |
| DC current gain | hFE(1) | 120 |  |  |  | Ta=25; VCE=-V, IC=-0.1A | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.4 | V | Ta=25; IC=-500mA, IB=-50mA | 1 |

## CAD (KiCad official)

- Symbol: `H2SB1260T100R`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `h2sb1260t100r-etched.step` / `h2sb1260t100r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `h2sb1260t100r.step` / `h2sb1260t100r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603010015167205376) (4 pp, sha256 `ef4b39034b12b21c`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/h2sb1260t100r-datasheet.pdf)