component

H2SB1260T100R

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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H2SB1260T100R

HXY MOSFET · Bipolar (BJT) · SOT-89

H2SB1260T100R from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of this PNP power transistor, with emitter-base breakdown V(BR)EBO of -5 V minimum and VEBO rated at -5 V maximum.
2 COLLECTOR passive Collector terminal, rated for VCBO and VCEO of -80 V maximum and collector power dissipation PC of 500 mW; the collector current rating is not legible in the extracted text.
3 EMITTER passive Emitter terminal, rated for VEBO of -5 V maximum, and the reference for the VCE(sat) of -0.4 V at IC=-500 mA, IB=-50 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -80 V Ta=25 (table header) 1
Collector-Emitter Voltage VCEO -80 V Ta=25 (table header) 1
Emitter-Base Voltage VEBO -5 V Ta=25 (table header) 1
Collector Power Dissipation PC 500 mW Ta=25 (table header) 1
Thermal Resistance From Junction To Ambient RΘJA 250 ℃/W 1
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO -80 V Ta=25; IC=-50 A, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -80 V Ta=25; IC=-1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V Ta=25; IE=-50 A, IC=0 1
Collector cut-off current ICBO -1 μA Ta=25; VCB=-60V, IE=0 1
Emitter cut-off current (row labeled Emitter-base breakdown voltage) IEBO -0.1 µA Ta=25; VEB=-4V, IC=0 1
DC current gain hFE(1) 120 Ta=25; VCE=-V, IC=-0.1A 1
Collector-emitter saturation voltage VCE(sat) -0.4 V Ta=25; IC=-500mA, IB=-50mA 1

CAD (KiCad official)

  • Symbol: H2SB1260T100R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: h2sb1260t100r-etched.step / h2sb1260t100r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); h2sb1260t100r.step / h2sb1260t100r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 ef4b39034b12b21c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF