# H2SA1037AKT146R

**HXY MOSFET** · Bipolar (BJT) · SOT-23

H2SA1037AKT146R from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet gives the saturation drive condition IB = -5 mA for IC = -50 mA (VCE(sat) max -0.25 V) and a base-emitter breakdown rating of VEBO -6 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, rated with an emitter-base breakdown voltage V(BR)EBO of -6 V and an absolute maximum emitter-base voltage VEBO of -6 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, limited to a collector-emitter voltage VCEO of -50 V and a collector-base voltage VCBO of -60 V, with a maximum collector power dissipation PC of 400 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -60 |  |  | V | IC=-50 A, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -50 |  |  | V | IC=-1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -6 |  |  | V | IE=-50 A, I C=0 | 1 |
| Collector cut-off current | ICBO |  |  | -0.1 | µA | VCE=-60V, IE=0 | 1 |
| Emitter-base cut-off current | IEBO |  |  | -0.1 | µA | VEB=-6V, IC=0 | 1 |
| DC current gain | hFE | 120 |  | 560 |  | VCE=-6V, IC=-1mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.25 | V | IC=-50mA, IB=-5mA | 1 |
| Collector-base voltage | VCBO |  |  | -60 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | -50 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | -6 | V |  | 1 |
| Collector current | IC |  |  | -150 | mA |  | 1 |
| Collector power dissipation | PC |  |  | 400 | mW |  | 1 |
| Thermal resistance from junction to ambient | RΘJA |  |  | 250 | /W |  | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `H2SA1037AKT146R`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `h2sa1037akt146r-etched.step` / `h2sa1037akt146r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `h2sa1037akt146r.step` / `h2sa1037akt146r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603010012524793856) (4 pp, sha256 `434e1615705c0b59`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/h2sa1037akt146r-datasheet.pdf)