component
H2SA1037AKT146R
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownH2SA1037AKT146R
HXY MOSFET · Bipolar (BJT) · SOT-23
H2SA1037AKT146R from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet gives the saturation drive condition IB = -5 mA for IC = -50 mA (VCE(sat) max -0.25 V) and a base-emitter breakdown rating of VEBO -6 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, rated with an emitter-base breakdown voltage V(BR)EBO of -6 V and an absolute maximum emitter-base voltage VEBO of -6 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, limited to a collector-emitter voltage VCEO of -50 V and a collector-base voltage VCBO of -60 V, with a maximum collector power dissipation PC of 400 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-50 A, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC=-1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -6 | V | IE=-50 A, I C=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | µA | VCE=-60V, IE=0 | 1 | ||
| Emitter-base cut-off current | IEBO | -0.1 | µA | VEB=-6V, IC=0 | 1 | ||
| DC current gain | hFE | 120 | 560 | VCE=-6V, IC=-1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.25 | V | IC=-50mA, IB=-5mA | 1 | ||
| Collector-base voltage | VCBO | -60 | V | 1 | |||
| Collector-emitter voltage | VCEO | -50 | V | 1 | |||
| Emitter-base voltage | VEBO | -6 | V | 1 | |||
| Collector current | IC | -150 | mA | 1 | |||
| Collector power dissipation | PC | 400 | mW | 1 | |||
| Thermal resistance from junction to ambient | RΘJA | 250 | /W | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
H2SA1037AKT146R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
h2sa1037akt146r-etched.step/h2sa1037akt146r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h2sa1037akt146r.step/h2sa1037akt146r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
434e1615705c0b59, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).