component
H11AA1
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Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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H11AA1
Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6
H11AA1 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A/C | input | Anti-parallel LED input terminal (anode/cathode), AC or polarity insensitive, with forward current rated at ±60 mA continuous. |
| 2 | C/A | input | Anti-parallel LED input terminal (cathode/anode), AC or polarity insensitive, with forward current rated at ±60 mA continuous. |
| 3 | NC | unconnected | No internal connection. |
| 4 | E | passive | Phototransistor emitter, with emitter-base breakdown voltage of 5 V minimum. |
| 5 | C | passive | Phototransistor collector, with collector-emitter breakdown voltage of 30 V minimum and collector-base breakdown voltage of 70 V minimum. |
| 6 | B | passive | Phototransistor base connection, with collector-base breakdown voltage of 70 V minimum and emitter-base breakdown voltage of 5 V minimum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 1.2 | 1.5 | V | IF = ± 10 mA | 2 | |
| Collector emitter breakdown voltage | BVCEO | 30 | V | IC = 1 mA | 2 | ||
| Emitter base breakdown voltage | BVEBO | 5 | V | IE = 100 μA | 2 | ||
| Collector base breakdown voltage | BVCBO | 70 | V | IC = 100 μA | 2 | ||
| Collector emitter leakage current | ICEO | 5 | 100 | nA | VCE = 10 V | 2 | |
| Collector emitter saturation voltage | VCEsat | 0.4 | V | IF = ± 10 mA, IC = 0.5 mA | 2 | ||
| DC current transfer ratio | CTRDC | 20 | % | IF = ± 10 mA, VCE = 10 V | 2 | ||
| Symmetry | 0.33 | 1 | 3 | (CTR at + 10 mA)/(CTR at - 10 mA) | 2 | ||
| Forward continuous current | IF | -60 | 60 | mA | Input, Tamb = 25 °C | 2 | |
| Input power dissipation | Pdiss | 100 | mW | Input, Tamb = 25 °C | 2 | ||
| Output power dissipation | Pdiss | 200 | mW | Output, Tamb = 25 °C | 2 | ||
| Collector emitter breakdown voltage (abs max) | BVCEO | 30 | V | Output, Tamb = 25 °C | 2 | ||
| Emitter base breakdown voltage (abs max) | BVEBO | 5 | V | Output, Tamb = 25 °C | 2 | ||
| Collector base breakdown voltage (abs max) | BVCBO | 70 | V | Output, Tamb = 25 °C | 2 | ||
| Isolation test voltage (RMS) | VISO | 5300 | VRMS | Between emitter and detector, referred to standard climate 23 °C/50% RH, DIN 50014 | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Operating temperature range | Tamb | -55 | 100 | °C | 2 | ||
| Lead soldering time at 260 °C | Tsld | 10 | s | 2 | |||
| Creepage distance | 7 | mm | 2 | ||||
| Clearance distance | 7 | mm | 2 | ||||
| Comparative tracking index | CTI | 175 | per DIN IEC 112/VDE 0303, part 1 | 2 |
CAD (KiCad official)
- Symbol:
H11AA1 - Footprint:
Package_DIP:DIP-6_W7.62mm - 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files:
h11aa1-etched.step/h11aa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h11aa1.step/h11aa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
52733414639e8056, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# H11AA1
**Vishay Intertech** · Transistor, Photovoltaic Output Optoisolators · DIP-6
H11AA1 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A/C | input | Anti-parallel LED input terminal (anode/cathode), AC or polarity insensitive, with forward current rated at ±60 mA continuous. |
| 2 | C/A | input | Anti-parallel LED input terminal (cathode/anode), AC or polarity insensitive, with forward current rated at ±60 mA continuous. |
| 3 | NC | unconnected | No internal connection. |
| 4 | E | passive | Phototransistor emitter, with emitter-base breakdown voltage of 5 V minimum. |
| 5 | C | passive | Phototransistor collector, with collector-emitter breakdown voltage of 30 V minimum and collector-base breakdown voltage of 70 V minimum. |
| 6 | B | passive | Phototransistor base connection, with collector-base breakdown voltage of 70 V minimum and emitter-base breakdown voltage of 5 V minimum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | | 1.2 | 1.5 | V | IF = ± 10 mA | 2 |
| Collector emitter breakdown voltage | BVCEO | 30 | | | V | IC = 1 mA | 2 |
| Emitter base breakdown voltage | BVEBO | 5 | | | V | IE = 100 μA | 2 |
| Collector base breakdown voltage | BVCBO | 70 | | | V | IC = 100 μA | 2 |
| Collector emitter leakage current | ICEO | | 5 | 100 | nA | VCE = 10 V | 2 |
| Collector emitter saturation voltage | VCEsat | | | 0.4 | V | IF = ± 10 mA, IC = 0.5 mA | 2 |
| DC current transfer ratio | CTRDC | 20 | | | % | IF = ± 10 mA, VCE = 10 V | 2 |
| Symmetry | | 0.33 | 1 | 3 | | (CTR at + 10 mA)/(CTR at - 10 mA) | 2 |
| Forward continuous current | IF | -60 | | 60 | mA | Input, Tamb = 25 °C | 2 |
| Input power dissipation | Pdiss | | | 100 | mW | Input, Tamb = 25 °C | 2 |
| Output power dissipation | Pdiss | | | 200 | mW | Output, Tamb = 25 °C | 2 |
| Collector emitter breakdown voltage (abs max) | BVCEO | | | 30 | V | Output, Tamb = 25 °C | 2 |
| Emitter base breakdown voltage (abs max) | BVEBO | | | 5 | V | Output, Tamb = 25 °C | 2 |
| Collector base breakdown voltage (abs max) | BVCBO | | | 70 | V | Output, Tamb = 25 °C | 2 |
| Isolation test voltage (RMS) | VISO | | | 5300 | VRMS | Between emitter and detector, referred to standard climate 23 °C/50% RH, DIN 50014 | 2 |
| Storage temperature range | Tstg | -55 | | 150 | °C | | 2 |
| Operating temperature range | Tamb | -55 | | 100 | °C | | 2 |
| Lead soldering time at 260 °C | Tsld | | | 10 | s | | 2 |
| Creepage distance | | 7 | | | mm | | 2 |
| Clearance distance | | 7 | | | mm | | 2 |
| Comparative tracking index | CTI | 175 | | | | per DIN IEC 112/VDE 0303, part 1 | 2 |
## CAD (KiCad official)
- Symbol: `H11AA1`
- Footprint: `Package_DIP:DIP-6_W7.62mm`
- 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files: `h11aa1-etched.step` / `h11aa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `h11aa1.step` / `h11aa1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](docs/h11aa1-datasheet.pdf) (7 pp, sha256 `52733414639e8056`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/h11aa1-datasheet.pdf)