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H11AA1

Public Made by Adom

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Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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H11AA1

Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6

H11AA1 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A/C input Anti-parallel LED input terminal (anode/cathode), AC or polarity insensitive, with forward current rated at ±60 mA continuous.
2 C/A input Anti-parallel LED input terminal (cathode/anode), AC or polarity insensitive, with forward current rated at ±60 mA continuous.
3 NC unconnected No internal connection.
4 E passive Phototransistor emitter, with emitter-base breakdown voltage of 5 V minimum.
5 C passive Phototransistor collector, with collector-emitter breakdown voltage of 30 V minimum and collector-base breakdown voltage of 70 V minimum.
6 B passive Phototransistor base connection, with collector-base breakdown voltage of 70 V minimum and emitter-base breakdown voltage of 5 V minimum.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DIP-6
Category Optoisolators
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward voltage VF 1.2 1.5 V IF = ± 10 mA 2
Collector emitter breakdown voltage BVCEO 30 V IC = 1 mA 2
Emitter base breakdown voltage BVEBO 5 V IE = 100 μA 2
Collector base breakdown voltage BVCBO 70 V IC = 100 μA 2
Collector emitter leakage current ICEO 5 100 nA VCE = 10 V 2
Collector emitter saturation voltage VCEsat 0.4 V IF = ± 10 mA, IC = 0.5 mA 2
DC current transfer ratio CTRDC 20 % IF = ± 10 mA, VCE = 10 V 2
Symmetry 0.33 1 3 (CTR at + 10 mA)/(CTR at - 10 mA) 2
Forward continuous current IF -60 60 mA Input, Tamb = 25 °C 2
Input power dissipation Pdiss 100 mW Input, Tamb = 25 °C 2
Output power dissipation Pdiss 200 mW Output, Tamb = 25 °C 2
Collector emitter breakdown voltage (abs max) BVCEO 30 V Output, Tamb = 25 °C 2
Emitter base breakdown voltage (abs max) BVEBO 5 V Output, Tamb = 25 °C 2
Collector base breakdown voltage (abs max) BVCBO 70 V Output, Tamb = 25 °C 2
Isolation test voltage (RMS) VISO 5300 VRMS Between emitter and detector, referred to standard climate 23 °C/50% RH, DIN 50014 2
Storage temperature range Tstg -55 150 °C 2
Operating temperature range Tamb -55 100 °C 2
Lead soldering time at 260 °C Tsld 10 s 2
Creepage distance 7 mm 2
Clearance distance 7 mm 2
Comparative tracking index CTI 175 per DIN IEC 112/VDE 0303, part 1 2

CAD (KiCad official)

  • Symbol: H11AA1
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: h11aa1-etched.step / h11aa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); h11aa1.step / h11aa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 52733414639e8056, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF