# GT880P15D5

**GOFORD** · MOSFETs · DFN5X6-8L

GT880P15D5 from GOFORD, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, shorted with pins 2 and 3; continuous drain current is -30A at TC = 25ºC. |
| 2 | S | passive | Source of the P-channel MOSFET, shorted with pins 1 and 3; continuous drain current is -30A at TC = 25ºC. |
| 3 | S | passive | Source of the P-channel MOSFET, shorted with pins 1 and 2; continuous drain current is -30A at TC = 25ºC. |
| 4 | G | input | Gate of the P-channel MOSFET with a maximum gate-source voltage of ±20V and a threshold of -1.0V to -3.0V. |
| 5 | D | passive | Drain of the P-channel MOSFET, shorted with pins 6, 7 and 8; drain-source voltage is rated -150V. |
| 6 | D | passive | Drain of the P-channel MOSFET, shorted with pins 5, 7 and 8; drain-source voltage is rated -150V. |
| 7 | D | passive | Drain of the P-channel MOSFET, shorted with pins 5, 6 and 8; drain-source voltage is rated -150V. |
| 8 | D | passive | Drain of the P-channel MOSFET, shorted with pins 5, 6 and 7; drain-source voltage is rated -150V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -150 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID |  |  | -30 | A | TC = 25ºC | 1 |
| Continuous Drain Current | ID |  |  | -19 | A | TC = 100ºC | 1 |
| Pulsed Drain Current | IDM |  |  | -120 | A | TC = 25ºC | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC = 25ºC | 1 |
| Power Dissipation | PD |  |  | 138 | W | TC = 25ºC | 1 |
| Single pulse avalanche energy | EAS |  |  | 156 | mJ | Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC | TC = 25ºC | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  |  | 50 | ºC/W |  | 1 |
| Maximum Junction-to-Case | RthJC |  |  | 0.9 | ºC/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -150 |  |  | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS = -150V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2 | -3 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 82 | 90 | mΩ | VGS = -10V, ID = -15A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 94 | 120 | mΩ | VGS = -4.5V, ID = -15A | 2 |
| Forward Transconductance | gFS |  | 31 |  | S | VDS = -5V, ID = -15A | 2 |
| Continuous Body Diode Current | IS |  |  | -30 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD |  |  | -1.2 | V | TJ = 25ºC, ISD = -15A, VGS = 0V | 2 |
| Input Capacitance | Ciss |  | 3350 |  | pF | VGS = 0V, VDS = -75V, f = 1.0MHz | 2 |
| Output Capacitance | Coss |  | 145 |  | pF | VGS = 0V, VDS = -75V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 6 |  | pF | VGS = 0V, VDS = -75V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg |  | 46 |  | nC | VDD = -75V, ID = -15A, VGS = -10V | 2 |
| Gate-Source Charge | Qgs |  | 9 |  | nC | VDD = -75V, ID = -15A, VGS = -10V | 2 |
| Gate-Drain Charge | Qgd |  | 5 |  | nC | VDD = -75V, ID = -15A, VGS = -10V | 2 |
| Turn-on Delay Time | td(on) |  | 62 |  | ns | VDD = -75V, ID = -15A, RG = 1.6Ω | 2 |
| Turn-on Rise Time | tr |  | 17 |  | ns | VDD = -75V, ID = -15A, RG = 1.6Ω | 2 |
| Turn-off Delay Time | td(off) |  | 68 |  | ns | VDD = -75V, ID = -15A, RG = 1.6Ω | 2 |
| Turn-off Fall Time | tf |  | 29 |  | ns | VDD = -75V, ID = -15A, RG = 1.6Ω | 2 |
| Reverse Recovery Charge | Qrr |  | 362 |  | nC | IF = -15A, VGS = 0V, di/dt=-100A/us | 2 |
| Reverse Recovery Time | Trr |  | 88 |  | ns | IF = -15A, VGS = 0V, di/dt=-100A/us | 2 |

## CAD (KiCad official)

- Symbol: `GT880P15D5`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `gt880p15d5-etched.step` / `gt880p15d5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gt880p15d5.step` / `gt880p15d5.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](docs/gt880p15d5-datasheet.pdf) (6 pp, sha256 `d5c38c9dc2f4df0e`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/gt880p15d5-datasheet.pdf)