main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers gt880p15d5: viewers · Ray 17d ago
gt880p15d5-etched.glb Publish 0.1.0 · Ray 17d ago
gt880p15d5-etched.step gt880p15d5: factory component page (tier=lcsc) · Ray 17d ago
gt880p15d5-hero.glb gt880p15d5: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
gt880p15d5-hero.overlay.json Publish 0.1.0 · Ray 17d ago
gt880p15d5.glb Publish 0.1.0 · Ray 17d ago
gt880p15d5.kicad_mod Publish 0.1.0 · Ray 17d ago
gt880p15d5.kicad_sym Publish 0.1.0 · Ray 17d ago
gt880p15d5.lbr Publish 0.1.0 · Ray 17d ago
gt880p15d5.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

GT880P15D5

GOFORD · MOSFETs · DFN5X6-8L

GT880P15D5 from GOFORD, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, shorted with pins 2 and 3; continuous drain current is -30A at TC = 25ºC.
2 S passive Source of the P-channel MOSFET, shorted with pins 1 and 3; continuous drain current is -30A at TC = 25ºC.
3 S passive Source of the P-channel MOSFET, shorted with pins 1 and 2; continuous drain current is -30A at TC = 25ºC.
4 G input Gate of the P-channel MOSFET with a maximum gate-source voltage of ±20V and a threshold of -1.0V to -3.0V.
5 D passive Drain of the P-channel MOSFET, shorted with pins 6, 7 and 8; drain-source voltage is rated -150V.
6 D passive Drain of the P-channel MOSFET, shorted with pins 5, 7 and 8; drain-source voltage is rated -150V.
7 D passive Drain of the P-channel MOSFET, shorted with pins 5, 6 and 8; drain-source voltage is rated -150V.
8 D passive Drain of the P-channel MOSFET, shorted with pins 5, 6 and 7; drain-source voltage is rated -150V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GOFORD
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -150 V TC = 25ºC 1
Continuous Drain Current ID -30 A TC = 25ºC 1
Continuous Drain Current ID -19 A TC = 100ºC 1
Pulsed Drain Current IDM -120 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 138 W TC = 25ºC 1
Single pulse avalanche energy EAS 156 mJ Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 0.9 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS -150 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -150V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -1 -2 -3 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 82 90 mΩ VGS = -10V, ID = -15A 2
Drain-Source On-Resistance RDS(on) 94 120 mΩ VGS = -4.5V, ID = -15A 2
Forward Transconductance gFS 31 S VDS = -5V, ID = -15A 2
Continuous Body Diode Current IS -30 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -15A, VGS = 0V 2
Input Capacitance Ciss 3350 pF VGS = 0V, VDS = -75V, f = 1.0MHz 2
Output Capacitance Coss 145 pF VGS = 0V, VDS = -75V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 6 pF VGS = 0V, VDS = -75V, f = 1.0MHz 2
Total Gate Charge Qg 46 nC VDD = -75V, ID = -15A, VGS = -10V 2
Gate-Source Charge Qgs 9 nC VDD = -75V, ID = -15A, VGS = -10V 2
Gate-Drain Charge Qgd 5 nC VDD = -75V, ID = -15A, VGS = -10V 2
Turn-on Delay Time td(on) 62 ns VDD = -75V, ID = -15A, RG = 1.6Ω 2
Turn-on Rise Time tr 17 ns VDD = -75V, ID = -15A, RG = 1.6Ω 2
Turn-off Delay Time td(off) 68 ns VDD = -75V, ID = -15A, RG = 1.6Ω 2
Turn-off Fall Time tf 29 ns VDD = -75V, ID = -15A, RG = 1.6Ω 2
Reverse Recovery Charge Qrr 362 nC IF = -15A, VGS = 0V, di/dt=-100A/us 2
Reverse Recovery Time Trr 88 ns IF = -15A, VGS = 0V, di/dt=-100A/us 2

CAD (KiCad official)

  • Symbol: GT880P15D5
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: gt880p15d5-etched.step / gt880p15d5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gt880p15d5.step / gt880p15d5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 d5c38c9dc2f4df0e, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF