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GT180P08D5

GOFORD · MOSFETs · DFN5x6-8L

GT180P08D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; VDS rating is -80V and continuous drain current is -89A at TC = 25ºC.
2 S passive Source of the P-channel MOSFET, tied to the same source node as pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied to the same source node as pins 1 and 2.
4 G input Gate of the P-channel MOSFET; VGS maximum is ±20V and threshold VGS(th) is -1.0V min to -2.5V max at ID = -250µA.
5 D passive Drain of the P-channel MOSFET; VDS maximum is -80V and pulsed drain current is -356A.
6 D passive Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 6 and 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GOFORD
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -80 V 1
Continuous Drain Current ID -89 A TC = 25ºC 1
Continuous Drain Current ID -56 A TC = 100ºC 1
Pulsed Drain Current IDM -356 A 1
Gate-Source Voltage VGS -20 20 V 1
Power Dissipation PD 245 W 1
Single pulse avalanche energy EAS 306 mJ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W 1
Thermal Resistance, Junction-to-Case RthJC 0.51 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS -80 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -80V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -1 -1.7 -2.5 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 15 18 mΩ VGS = -10V, ID = -20A 2
Drain-Source On-Resistance RDS(on) 18 21 mΩ VGS = -4.5V, ID = -15A 2
Forward Transconductance gFS 46 S VDS = -5V, ID = -20A 2
Input Capacitance Ciss 6000 pF VGS = 0V, VDS = -40V, f = 1.0MHz 2
Output Capacitance Coss 500 pF VGS = 0V, VDS = -40V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 30 pF VGS = 0V, VDS = -40V, f = 1.0MHz 2
Total Gate Charge Qg 103 nC VDD = -40V, ID = -20A, VGS = -10V 2
Gate-Source Charge Qgs 19 nC VDD = -40V, ID = -20A, VGS = -10V 2
Gate-Drain Charge Qgd 11 nC VDD = -40V, ID = -20A, VGS = -10V 2
Turn-on Delay Time td(on) 18 ns VDD = -40V, ID = -20A, RG = 3Ω 2
Turn-on Rise Time tr 20 ns VDD = -40V, ID = -20A, RG = 3Ω 2
Turn-off Delay Time td(off) 55 ns VDD = -40V, ID = -20A, RG = 3Ω 2
Turn-off Fall Time tf 35 ns VDD = -40V, ID = -20A, RG = 3Ω 2
Continuous Body Diode Current IS -89 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -20A, VGS = 0V 2
Reverse Recovery Charge Qrr 49 nC IF = -20A, VGS = 0V, di/dt = -100A/us 2
Reverse Recovery Time Trr 71 ns IF = -20A, VGS = 0V, di/dt = -100A/us 2

CAD (KiCad official)

  • Symbol: GT180P08D5
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: gt180p08d5-etched.step / gt180p08d5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gt180p08d5.step / gt180p08d5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 099788f48667b422, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF