component
GT180P08D5
Public Made by Adomby adom
GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGT180P08D5
GOFORD · MOSFETs · DFN5x6-8L
GT180P08D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS rating is -80V and continuous drain current is -89A at TC = 25ºC. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the same source node as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the same source node as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS maximum is ±20V and threshold VGS(th) is -1.0V min to -2.5V max at ID = -250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS maximum is -80V and pulsed drain current is -356A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -80 | V | 1 | |||
| Continuous Drain Current | ID | -89 | A | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | -56 | A | TC = 100ºC | 1 | ||
| Pulsed Drain Current | IDM | -356 | A | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 245 | W | 1 | |||
| Single pulse avalanche energy | EAS | 306 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 60 | ºC/W | 1 | |||
| Thermal Resistance, Junction-to-Case | RthJC | 0.51 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -80 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -80V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 15 | 18 | mΩ | VGS = -10V, ID = -20A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 18 | 21 | mΩ | VGS = -4.5V, ID = -15A | 2 | |
| Forward Transconductance | gFS | 46 | S | VDS = -5V, ID = -20A | 2 | ||
| Input Capacitance | Ciss | 6000 | pF | VGS = 0V, VDS = -40V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 500 | pF | VGS = 0V, VDS = -40V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 30 | pF | VGS = 0V, VDS = -40V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 103 | nC | VDD = -40V, ID = -20A, VGS = -10V | 2 | ||
| Gate-Source Charge | Qgs | 19 | nC | VDD = -40V, ID = -20A, VGS = -10V | 2 | ||
| Gate-Drain Charge | Qgd | 11 | nC | VDD = -40V, ID = -20A, VGS = -10V | 2 | ||
| Turn-on Delay Time | td(on) | 18 | ns | VDD = -40V, ID = -20A, RG = 3Ω | 2 | ||
| Turn-on Rise Time | tr | 20 | ns | VDD = -40V, ID = -20A, RG = 3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 55 | ns | VDD = -40V, ID = -20A, RG = 3Ω | 2 | ||
| Turn-off Fall Time | tf | 35 | ns | VDD = -40V, ID = -20A, RG = 3Ω | 2 | ||
| Continuous Body Diode Current | IS | -89 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -20A, VGS = 0V | 2 | ||
| Reverse Recovery Charge | Qrr | 49 | nC | IF = -20A, VGS = 0V, di/dt = -100A/us | 2 | ||
| Reverse Recovery Time | Trr | 71 | ns | IF = -20A, VGS = 0V, di/dt = -100A/us | 2 |
CAD (KiCad official)
- Symbol:
GT180P08D5 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
gt180p08d5-etched.step/gt180p08d5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gt180p08d5.step/gt180p08d5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
099788f48667b422, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).