component
GT080N08D5
Public Made by Adomby adom
GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GT080N08D5
GOFORD · MOSFETs · DFN5x6-8L
GT080N08D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; the datasheet gives no separate pin-level limits, and the part is rated for VDS 85V and ID 65A continuous. |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet gives no separate pin-level limits, and the part is rated for VDS 85V and ID 65A continuous. |
| 3 | S | passive | Source of the N-channel MOSFET; the datasheet gives no separate pin-level limits, and the part is rated for VDS 85V and ID 65A continuous. |
| 4 | G | input | Gate of the N-channel MOSFET with an absolute maximum gate-source voltage of ±20V and a threshold of 2V to 4V. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 85 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 65 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | 260 | A | Repetitive, pulse width limited by max junction temperature (note 1) | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 69 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy | EAS | 81 | mJ | Note 2: Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 50 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 1.8 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 85 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 85V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 7 | 8.5 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Continuous Body Diode Current | IS | 65 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 20A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
GT080N08D5 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
gt080n08d5-etched.step/gt080n08d5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gt080n08d5.step/gt080n08d5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
8b44d76e91e86ad2, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GT080N08D5
**GOFORD** · MOSFETs · DFN5x6-8L
GT080N08D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; the datasheet gives no separate pin-level limits, and the part is rated for VDS 85V and ID 65A continuous. |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet gives no separate pin-level limits, and the part is rated for VDS 85V and ID 65A continuous. |
| 3 | S | passive | Source of the N-channel MOSFET; the datasheet gives no separate pin-level limits, and the part is rated for VDS 85V and ID 65A continuous. |
| 4 | G | input | Gate of the N-channel MOSFET with an absolute maximum gate-source voltage of ±20V and a threshold of 2V to 4V. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 85 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID | | | 65 | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM | | | 260 | A | Repetitive, pulse width limited by max junction temperature (note 1) | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25ºC | 1 |
| Power Dissipation | PD | | | 69 | W | TC = 25ºC | 1 |
| Single pulse avalanche energy | EAS | | | 81 | mJ | Note 2: Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | | 50 | ºC/W | | 1 |
| Maximum Junction-to-Case | RthJC | | | 1.8 | ºC/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 85 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 85V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 7 | 8.5 | mΩ | VGS = 10V, ID = 20A | 2 |
| Continuous Body Diode Current | IS | | | 65 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | 1.2 | V | TJ = 25ºC, ISD = 20A, VGS = 0V | 2 |
## CAD (KiCad official)
- Symbol: `GT080N08D5`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `gt080n08d5-etched.step` / `gt080n08d5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gt080n08d5.step` / `gt080n08d5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/gt080n08d5-datasheet.pdf) (6 pp, sha256 `8b44d76e91e86ad2`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gt080n08d5-datasheet.pdf)