component

GT080N08D5

Public Made by Adom

by adom

GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsgt080n08d5factory-2.0.0extractor-text

Verified GT080N08D5

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: GT080N08D5 · DFN5x6-8L · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 6-page datasheet
  • •distributor (warn): no ['mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-izwkpww0/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ gt080n08d5.kicad_sym✓ gt080n08d5.kicad_mod✓ gt080n08d5.step
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23h ago
viewers gt080n08d5: viewers · Ray 23h ago
gt080n08d5-etched.glb Publish 0.1.0 · Ray 23h ago
gt080n08d5-etched.step gt080n08d5: factory component page (tier=lcsc) · Ray 23h ago
gt080n08d5-hero.glb gt080n08d5: hero GLB from the etched model (keeps the MPN mark) · Ray 23h ago
gt080n08d5-hero.overlay.json Publish 0.1.0 · Ray 23h ago
gt080n08d5.glb Publish 0.1.0 · Ray 23h ago
gt080n08d5.kicad_mod Publish 0.1.0 · Ray 23h ago
gt080n08d5.kicad_sym Publish 0.1.0 · Ray 23h ago
gt080n08d5.lbr Publish 0.1.0 · Ray 23h ago
gt080n08d5.step Publish 0.1.0 · Ray 23h ago
package.json Publish 0.1.0 · Ray 23h ago
page.json Set visibility: public · Ray 23h ago
README.md Publish 0.1.0 · Ray 23h ago
verification.json Verified: Published by the parts factory: tier lcsc, 9 pins · Ray 23h ago

GT080N08D5

GOFORD · MOSFETs · DFN5x6-8L

GT080N08D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; the datasheet gives no separate pin-level limits, and the part is rated for VDS 85V and ID 65A continuous.
2 S passive Source of the N-channel MOSFET; the datasheet gives no separate pin-level limits, and the part is rated for VDS 85V and ID 65A continuous.
3 S passive Source of the N-channel MOSFET; the datasheet gives no separate pin-level limits, and the part is rated for VDS 85V and ID 65A continuous.
4 G input Gate of the N-channel MOSFET with an absolute maximum gate-source voltage of ±20V and a threshold of 2V to 4V.
5 D passive Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V.
6 D passive Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V.
7 D passive Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V.
8 D passive Drain of the N-channel MOSFET, rated 85V drain-source and 65A continuous drain current, with RDS(on) below 8.5mΩ at VGS = 10V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GOFORD
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 85 V TC = 25ºC 1
Continuous Drain Current ID 65 A TC = 25ºC 1
Pulsed Drain Current IDM 260 A Repetitive, pulse width limited by max junction temperature (note 1) 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 69 W TC = 25ºC 1
Single pulse avalanche energy EAS 81 mJ Note 2: Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 1.8 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 85 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 85V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 7 8.5 mΩ VGS = 10V, ID = 20A 2
Continuous Body Diode Current IS 65 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 20A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: GT080N08D5
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: gt080n08d5-etched.step / gt080n08d5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gt080n08d5.step / gt080n08d5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 8b44d76e91e86ad2, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF