component
GT040N10M
Public Made by Adomby adom
GOFORD MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GT040N10M
GOFORD · MOSFETs · TO-263
GT040N10M from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and VGS(th) 1.0 V min to 2.5 V max at ID = 250 µA. |
| 2 | D | passive | Drain; rated VDS 100 V and 140 A continuous at TC = 25ºC (560 A pulsed). |
| 3 | S | passive | Source; body diode continuous current IS is 140 A at TC = 25ºC, with VSD up to 1.2 V at 40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 140 | A | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 89 | A | TC = 100ºC | 1 | ||
| Pulsed Drain Current | IDM | 560 | A | TC = 25ºC, note1 | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 200 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy | EAS | 420 | mJ | note2 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 50 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 0.625 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.9 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 3.7 | 4.5 | mΩ | VGS = 10V, ID = 40A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 4.6 | 5.5 | mΩ | VGS = 4.5V, ID = 40A | 2 | |
| Continuous Body Diode Current | IS | 140 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 40A, VGS = 0V | 2 | ||
| Forward Transconductance | gFS | 48 | S | VGS = 5V, ID = 40A | 2 | ||
| Input Capacitance | Ciss | 5920 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 755 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 65 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 100 | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 16 | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 20 | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 | ||
| Turn-on Delay Time | td(on) | 24 | ns | VDD = 50V, ID = 40A, RG = 1.6Ω | 2 | ||
| Turn-on Rise Time | tr | 18 | ns | VDD = 50V, ID = 40A, RG = 1.6Ω | 2 | ||
| Turn-off Delay Time | td(off) | 54 | ns | VDD = 50V, ID = 40A, RG = 1.6Ω | 2 | ||
| Turn-off Fall Time | tf | 14 | ns | VDD = 50V, ID = 40A, RG = 1.6Ω | 2 | ||
| Reverse Recovery Charge | Qrr | 174 | nC | IF = 40A, VGS = 0V, di/dt=100A/us | 2 | ||
| Reverse Recovery Time | Trr | 98 | ns | IF = 40A, VGS = 0V, di/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
GT040N10M - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
gt040n10m-etched.step/gt040n10m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gt040n10m.step/gt040n10m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
3e9a7241e95915a6, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GT040N10M
**GOFORD** · MOSFETs · TO-263
GT040N10M from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and VGS(th) 1.0 V min to 2.5 V max at ID = 250 µA. |
| 2 | D | passive | Drain; rated VDS 100 V and 140 A continuous at TC = 25ºC (560 A pulsed). |
| 3 | S | passive | Source; body diode continuous current IS is 140 A at TC = 25ºC, with VSD up to 1.2 V at 40 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID | | | 140 | A | TC = 25ºC | 1 |
| Continuous Drain Current | ID | | | 89 | A | TC = 100ºC | 1 |
| Pulsed Drain Current | IDM | | | 560 | A | TC = 25ºC, note1 | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25ºC | 1 |
| Power Dissipation | PD | | | 200 | W | TC = 25ºC | 1 |
| Single pulse avalanche energy | EAS | | | 420 | mJ | note2 | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | | 50 | ºC/W | | 1 |
| Maximum Junction-to-Case | RthJC | | | 0.625 | ºC/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 100V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.9 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 3.7 | 4.5 | mΩ | VGS = 10V, ID = 40A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 4.6 | 5.5 | mΩ | VGS = 4.5V, ID = 40A | 2 |
| Continuous Body Diode Current | IS | | | 140 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | 1.2 | V | TJ = 25ºC, ISD = 40A, VGS = 0V | 2 |
| Forward Transconductance | gFS | | 48 | | S | VGS = 5V, ID = 40A | 2 |
| Input Capacitance | Ciss | | 5920 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 755 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 65 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 100 | | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 |
| Gate-Source Charge | Qgs | | 16 | | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 |
| Gate-Drain Charge | Qgd | | 20 | | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 |
| Turn-on Delay Time | td(on) | | 24 | | ns | VDD = 50V, ID = 40A, RG = 1.6Ω | 2 |
| Turn-on Rise Time | tr | | 18 | | ns | VDD = 50V, ID = 40A, RG = 1.6Ω | 2 |
| Turn-off Delay Time | td(off) | | 54 | | ns | VDD = 50V, ID = 40A, RG = 1.6Ω | 2 |
| Turn-off Fall Time | tf | | 14 | | ns | VDD = 50V, ID = 40A, RG = 1.6Ω | 2 |
| Reverse Recovery Charge | Qrr | | 174 | | nC | IF = 40A, VGS = 0V, di/dt=100A/us | 2 |
| Reverse Recovery Time | Trr | | 98 | | ns | IF = 40A, VGS = 0V, di/dt=100A/us | 2 |
## CAD (KiCad official)
- Symbol: `GT040N10M`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `gt040n10m-etched.step` / `gt040n10m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gt040n10m.step` / `gt040n10m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/gt040n10m-datasheet.pdf) (6 pp, sha256 `3e9a7241e95915a6`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gt040n10m-datasheet.pdf)