component

GT040N10M

Public Made by Adom

by adom

GOFORD MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsgt040n10mfactory-2.0.0extractor-text

Verified GT040N10M

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: GT040N10M · TO-263 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['mouser'] number
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-duipcxdz/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ gt040n10m.kicad_sym✓ gt040n10m.kicad_mod✓ gt040n10m.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers gt040n10m: viewers · Ray 8d ago
gt040n10m-etched.glb Publish 0.1.0 · Ray 8d ago
gt040n10m-etched.step gt040n10m: factory component page (tier=lcsc) · Ray 8d ago
gt040n10m-hero.glb gt040n10m: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
gt040n10m-hero.overlay.json Publish 0.1.0 · Ray 8d ago
gt040n10m.glb Publish 0.1.0 · Ray 8d ago
gt040n10m.kicad_mod Publish 0.1.0 · Ray 8d ago
gt040n10m.kicad_sym Publish 0.1.0 · Ray 8d ago
gt040n10m.lbr Publish 0.1.0 · Ray 8d ago
gt040n10m.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 8d ago

GT040N10M

GOFORD · MOSFETs · TO-263

GT040N10M from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and VGS(th) 1.0 V min to 2.5 V max at ID = 250 µA.
2 D passive Drain; rated VDS 100 V and 140 A continuous at TC = 25ºC (560 A pulsed).
3 S passive Source; body diode continuous current IS is 140 A at TC = 25ºC, with VSD up to 1.2 V at 40 A.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TC = 25ºC 1
Continuous Drain Current ID 140 A TC = 25ºC 1
Continuous Drain Current ID 89 A TC = 100ºC 1
Pulsed Drain Current IDM 560 A TC = 25ºC, note1 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 200 W TC = 25ºC 1
Single pulse avalanche energy EAS 420 mJ note2 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 0.625 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1 1.9 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 3.7 4.5 mΩ VGS = 10V, ID = 40A 2
Drain-Source On-Resistance RDS(on) 4.6 5.5 mΩ VGS = 4.5V, ID = 40A 2
Continuous Body Diode Current IS 140 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 40A, VGS = 0V 2
Forward Transconductance gFS 48 S VGS = 5V, ID = 40A 2
Input Capacitance Ciss 5920 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Output Capacitance Coss 755 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 65 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Total Gate Charge Qg 100 nC VDD = 50V, ID = 40A, VGS = 10V 2
Gate-Source Charge Qgs 16 nC VDD = 50V, ID = 40A, VGS = 10V 2
Gate-Drain Charge Qgd 20 nC VDD = 50V, ID = 40A, VGS = 10V 2
Turn-on Delay Time td(on) 24 ns VDD = 50V, ID = 40A, RG = 1.6Ω 2
Turn-on Rise Time tr 18 ns VDD = 50V, ID = 40A, RG = 1.6Ω 2
Turn-off Delay Time td(off) 54 ns VDD = 50V, ID = 40A, RG = 1.6Ω 2
Turn-off Fall Time tf 14 ns VDD = 50V, ID = 40A, RG = 1.6Ω 2
Reverse Recovery Charge Qrr 174 nC IF = 40A, VGS = 0V, di/dt=100A/us 2
Reverse Recovery Time Trr 98 ns IF = 40A, VGS = 0V, di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: GT040N10M
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: gt040n10m-etched.step / gt040n10m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gt040n10m.step / gt040n10m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 3e9a7241e95915a6, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF