GP1S194HCZ0F

{
 "schema": "adom.pads/1",
 "slug": "gp1s194hcz0f",
 "footprint": "DIP-4_W7.62mm",
 "generated_from": {
  "footprint": "DIP-4_W7.62mm@sha256:3884cdce734b1b9d",
  "pins": "page.json:component.pins",
  "overrides": null
 },
 "pin1": {
  "pad": "1",
  "at": [
   0.0,
   0.0
  ],
  "corner": "bottom-right",
  "source": "fab-chamfer",
  "derived_from": "DIP-4_W7.62mm@sha256:3884cdce734b1b9d"
 },
 "pad_count": 4,
 "symbol_pins": [
  "1",
  "2",
  "3",
  "4"
 ],
 "paste_apertures": 0,
 "issues": [],
 "pads": [
  {
   "pad": "1",
   "kind": "thru_hole",
   "shape": "roundrect",
   "at": [
    0.0,
    0.0
   ],
   "rot": 0.0,
   "size": [
    1.6,
    1.6
   ],
   "layers": [],
   "thermal": false,
   "pin": "1",
   "name": "A",
   "type": "passive",
   "description": "Anode of the infrared LED emitter (GaAs, 950nm). Forward voltage VF = 1.2V typ / 1.4V max at IF=20mA; absolute maximum forward current IF = 30mA; reverse voltage VR = 6V max. Drive through a current-limiting resistor from VCC.",
   "is_pin1": true,
   "source": {
    "geometry": "DIP-4_W7.62mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "2",
   "kind": "thru_hole",
   "shape": "circle",
   "at": [
    0.0,
    2.54
   ],
   "rot": 0.0,
   "size": [
    1.6,
    1.6
   ],
   "layers": [],
   "thermal": false,
   "pin": "2",
   "name": "K",
   "type": "passive",
   "description": "Cathode of the infrared LED emitter. Typically tied to ground (through the LED path). Package outline notes this pad is at 'same voltage with Anode' on the substrate marking side.",
   "is_pin1": false,
   "source": {
    "geometry": "DIP-4_W7.62mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "3",
   "kind": "thru_hole",
   "shape": "circle",
   "at": [
    7.62,
    2.54
   ],
   "rot": 0.0,
   "size": [
    1.6,
    1.6
   ],
   "layers": [],
   "thermal": false,
   "pin": "3",
   "name": "C",
   "type": "passive",
   "description": "Collector of the NPN silicon phototransistor detector. Pull to VCC through a load resistor (test condition uses RL=1kΩ). Absolute maximum VCEO = 35V; collector current Ic max = 20mA; typical Ic = 150-600μA at IF=5mA, VCE=5V.",
   "is_pin1": false,
   "source": {
    "geometry": "DIP-4_W7.62mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "4",
   "kind": "thru_hole",
   "shape": "circle",
   "at": [
    7.62,
    0.0
   ],
   "rot": 0.0,
   "size": [
    1.6,
    1.6
   ],
   "layers": [],
   "thermal": false,
   "pin": "4",
   "name": "E",
   "type": "passive",
   "description": "Emitter of the NPN silicon phototransistor detector. Typically connected to ground; the collector-to-emitter output is taken across the load resistor. VCE(sat) = 0.4V max at IF=10mA, Ic=40μA.",
   "is_pin1": false,
   "source": {
    "geometry": "DIP-4_W7.62mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  }
 ]
}