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docs gp1s194hcz0f: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
viewers pin 1: carry the footprint's marker into the .lbr, the viewer and page.json (fab-chamfer, synthesised, bottom-right) · Ray
gp1s194hcz0f-etched.fit.json gp1s194hcz0f: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
gp1s194hcz0f-etched.glb gp1s194hcz0f: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
gp1s194hcz0f-etched.step gp1s194hcz0f: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
gp1s194hcz0f.glb Publish 0.1.0 · Ray
gp1s194hcz0f.kicad_mod Publish 0.1.0 · Ray
gp1s194hcz0f.kicad_sym Publish 0.1.0 · Ray
gp1s194hcz0f.lbr rebuild the library on adom-lbr 2.32.0. The published copy was built by 2.18.0, which imported every KiCad roundrect an… · Ray
gp1s194hcz0f.step Publish 0.1.0 · Ray
package.json Publish 0.2.0 · Ray
pads.json pin 1: carry the footprint's marker into the .lbr, the viewer and page.json (fab-chamfer, synthesised, bottom-right) · Ray
page.json gp1s194hcz0f: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray
README.md gp1s194hcz0f: laser-etched CAD + chip hero (factory 2.0.0 backfill) · Ray

GP1S194HCZ0F

Sharp Microelectronics · Photointerrupters - Slot Type - Transistor Output · DIP-4

GP1S194HCZ0F from Sharp Microelectronics, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the infrared LED emitter (GaAs, 950nm). Forward voltage VF = 1.2V typ / 1.4V max at IF=20mA; absolute maximum forward current IF = 30mA; reverse voltage VR = 6V max. Drive through a current-limiting resistor from VCC.
2 K passive Cathode of the infrared LED emitter. Typically tied to ground (through the LED path). Package outline notes this pad is at 'same voltage with Anode' on the substrate marking side.
3 C passive Collector of the NPN silicon phototransistor detector. Pull to VCC through a load resistor (test condition uses RL=1kΩ). Absolute maximum VCEO = 35V; collector current Ic max = 20mA; typical Ic = 150-600μA at IF=5mA, VCE=5V.
4 E passive Emitter of the NPN silicon phototransistor detector. Typically connected to ground; the collector-to-emitter output is taken across the load resistor. VCE(sat) = 0.4V max at IF=10mA, Ic=40μA.

Key specifications

Parameter Value
Manufacturer Sharp Microelectronics
Package DIP-4
Category Sensor
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • GP1S194HCZ0F

CAD (KiCad official)

  • Symbol: GP1S194HCZ0F
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: gp1s194hcz0f-etched.step / gp1s194hcz0f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gp1s194hcz0f.step / gp1s194hcz0f.glb are the bare package body.

3D model downloads

Two STEP files. Same geometry, different body top:

File Size Use it when
gp1s194hcz0f.step 158 KB You want the bare part, or you mark your own boards.
gp1s194hcz0f-etched.step 2.1 MB You want the part with GP1S194HCZ0F already on it.

The marking in the etched file is real recessed geometry cut into the solid, not a texture or a decal: 514 faces against 80 in the bare model. It survives export, section views, and rendering in any CAD tool, and it drops straight into KiCad or Fusion with no extra setup.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Sharp Microelectronics datasheet (10 pp, sha256 667e49079b4389cb, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF