component
GL6009AS-8
Public Made by Adomby adom
GL MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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gl6009as-8: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
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GL6009AS-8
GL · MOSFETs · SOIC-8
GL6009AS-8 from GL, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated 9 A. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is rated 9 A. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2; continuous drain current is rated 9 A. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-to-source voltage is rated ±20 V with a threshold of 1.0 to 2.5 V. |
| 5 | D | passive | Drain of the MOSFET, tied with pins 6 to 8; drain-to-source voltage is rated 60 V. |
| 6 | D | passive | Drain of the MOSFET, tied with pins 5, 7 and 8; drain-to-source voltage is rated 60 V. |
| 7 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 8; drain-to-source voltage is rated 60 V. |
| 8 | D | passive | Drain of the MOSFET, tied with pins 5 to 7; drain-to-source voltage is rated 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GL |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 9 | A | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 6.5 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | Tc=25℃ | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | Tc=25℃ | 1 | |
| Single Pulse Avalanche Energy | EAS | 50 | mJ | a2: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω | 1 | ||
| Avalanche Energy, Repetitive | EAR | 11 | mJ | a1: Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Avalanche Current | IAR | 5 | A | a1: Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | a3: ISD=9A,di/dt≤100A/us,VDD≤BVDS,Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 2.6 | W | Tc=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Drain to Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V,ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS = 60V,VGS=0V,Ta=25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 250 | µA | VDS=48V,VGS=0V,Ta=125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 1 | µA | VGS=+20V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -1 | µA | VGS=-20V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 11 | 14 | mΩ | VGS=10V,ID=9A; pulse width tp≤380µs,δ≤2% | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS= VGS,ID=250µA; pulse width tp≤380µs,δ≤2% | 2 |
| Forward Transconductance | gfs | 25 | S | VDS=5V,ID=9A | 2 | ||
| Continuous Source Current (Body Diode) | IS | 9 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 36 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=9A,VGS=0V; pulse width tp≤380µs,δ≤2% | 3 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 48 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
GL6009AS-8 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
gl6009as-8-etched.step/gl6009as-8-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gl6009as-8.step/gl6009as-8.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GL datasheet (5 pp, sha256
ff29a8116988637a, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GL6009AS-8
**GL** · MOSFETs · SOIC-8
GL6009AS-8 from GL, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated 9 A. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is rated 9 A. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2; continuous drain current is rated 9 A. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-to-source voltage is rated ±20 V with a threshold of 1.0 to 2.5 V. |
| 5 | D | passive | Drain of the MOSFET, tied with pins 6 to 8; drain-to-source voltage is rated 60 V. |
| 6 | D | passive | Drain of the MOSFET, tied with pins 5, 7 and 8; drain-to-source voltage is rated 60 V. |
| 7 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 8; drain-to-source voltage is rated 60 V. |
| 8 | D | passive | Drain of the MOSFET, tied with pins 5 to 7; drain-to-source voltage is rated 60 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GL |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 60 | V | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 9 | A | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 6.5 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 36 | A | Tc=25℃ | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | Tc=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS | | | 50 | mJ | a2: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω | 1 |
| Avalanche Energy, Repetitive | EAR | | | 11 | mJ | a1: Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Avalanche Current | IAR | | | 5 | A | a1: Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | a3: ISD=9A,di/dt≤100A/us,VDD≤BVDS,Start TJ=25℃ | 1 |
| Power Dissipation | PD | | | 2.6 | W | Tc=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | ℃ | | 1 |
| Maximum Temperature for Soldering | TL | | | 300 | ℃ | | 1 |
| Drain to Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS=0V,ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | µA | VDS = 60V,VGS=0V,Ta=25℃ | 2 |
| Drain to Source Leakage Current | IDSS | | | 250 | µA | VDS=48V,VGS=0V,Ta=125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) | | | 1 | µA | VGS=+20V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) | | | -1 | µA | VGS=-20V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | | 11 | 14 | mΩ | VGS=10V,ID=9A; pulse width tp≤380µs,δ≤2% | 2 |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS= VGS,ID=250µA; pulse width tp≤380µs,δ≤2% | 2 |
| Forward Transconductance | gfs | 25 | | | S | VDS=5V,ID=9A | 2 |
| Continuous Source Current (Body Diode) | IS | | | 9 | A | | 3 |
| Maximum Pulsed Current (Body Diode) | ISM | | | 36 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.5 | V | IS=9A,VGS=0V; pulse width tp≤380µs,δ≤2% | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 48 | | ℃/W | | 3 |
## CAD (KiCad official)
- Symbol: `GL6009AS-8`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `gl6009as-8-etched.step` / `gl6009as-8-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gl6009as-8.step` / `gl6009as-8.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GL datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590226279275528192) (5 pp, sha256 `ff29a8116988637a`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gl6009as-8-datasheet.pdf)