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Ray gl6009as-8: specified limits as data (metadata.characteristics, 24 rows from the datasheet) 48d9677 16d ago

GL6009AS-8

GL · MOSFETs · SOIC-8

GL6009AS-8 from GL, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated 9 A.
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is rated 9 A.
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2; continuous drain current is rated 9 A.
4 G input Gate of the N-channel MOSFET; gate-to-source voltage is rated ±20 V with a threshold of 1.0 to 2.5 V.
5 D passive Drain of the MOSFET, tied with pins 6 to 8; drain-to-source voltage is rated 60 V.
6 D passive Drain of the MOSFET, tied with pins 5, 7 and 8; drain-to-source voltage is rated 60 V.
7 D passive Drain of the MOSFET, tied with pins 5, 6 and 8; drain-to-source voltage is rated 60 V.
8 D passive Drain of the MOSFET, tied with pins 5 to 7; drain-to-source voltage is rated 60 V.

Key specifications

Parameter Value
Manufacturer GL
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 60 V Tc=25℃ 1
Continuous Drain Current ID 9 A Tc=25℃ 1
Continuous Drain Current ID 6.5 A TC = 100 °C 1
Pulsed Drain Current IDM 36 A Tc=25℃ 1
Gate-to-Source Voltage VGS -20 20 V Tc=25℃ 1
Single Pulse Avalanche Energy EAS 50 mJ a2: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω 1
Avalanche Energy, Repetitive EAR 11 mJ a1: Repetitive rating; pulse width limited by maximum junction temperature 1
Avalanche Current IAR 5 A a1: Repetitive rating; pulse width limited by maximum junction temperature 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns a3: ISD=9A,di/dt≤100A/us,VDD≤BVDS,Start TJ=25℃ 1
Power Dissipation PD 2.6 W Tc=25℃ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 1
Drain to Source Breakdown Voltage V(BR)DSS 60 V VGS=0V,ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS = 60V,VGS=0V,Ta=25℃ 2
Drain to Source Leakage Current IDSS 250 µA VDS=48V,VGS=0V,Ta=125℃ 2
Gate to Source Forward Leakage IGSS(F) 1 µA VGS=+20V 2
Gate to Source Reverse Leakage IGSS(R) -1 µA VGS=-20V 2
Drain-to-Source On-Resistance RDS(ON) 11 14 mΩ VGS=10V,ID=9A; pulse width tp≤380µs,δ≤2% 2
Gate Threshold Voltage VGS(TH) 1 1.7 2.5 V VDS= VGS,ID=250µA; pulse width tp≤380µs,δ≤2% 2
Forward Transconductance gfs 25 S VDS=5V,ID=9A 2
Continuous Source Current (Body Diode) IS 9 A 3
Maximum Pulsed Current (Body Diode) ISM 36 A 3
Diode Forward Voltage VSD 1.5 V IS=9A,VGS=0V; pulse width tp≤380µs,δ≤2% 3
Junction-to-Ambient Thermal Resistance RθJA 48 ℃/W 3

CAD (KiCad official)

  • Symbol: GL6009AS-8
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: gl6009as-8-etched.step / gl6009as-8-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gl6009as-8.step / gl6009as-8.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GL datasheet (5 pp, sha256 ff29a8116988637a, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF