component
GL6009AS-8
Public Made by Adomby adom
GL MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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gl6009as-8: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
2 files changed
+327−1
README.md+31@@ -26,6 +26,37 @@ GL6009AS-8 from GL, in a SOIC-8. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | | | 60 | V | Tc=25℃ | 1 |+| Continuous Drain Current | ID | | | 9 | A | Tc=25℃ | 1 |+| Continuous Drain Current | ID | | | 6.5 | A | TC = 100 °C | 1 |+| Pulsed Drain Current | IDM | | | 36 | A | Tc=25℃ | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | Tc=25℃ | 1 |+| Single Pulse Avalanche Energy | EAS | | | 50 | mJ | a2: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω | 1 |+| Avalanche Energy, Repetitive | EAR | | | 11 | mJ | a1: Repetitive rating; pulse width limited by maximum junction temperature | 1 |+| Avalanche Current | IAR | | | 5 | A | a1: Repetitive rating; pulse width limited by maximum junction temperature | 1 |+| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | a3: ISD=9A,di/dt≤100A/us,VDD≤BVDS,Start TJ=25℃ | 1 |+| Power Dissipation | PD | | | 2.6 | W | Tc=25℃ | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | ℃ | | 1 |+| Maximum Temperature for Soldering | TL | | | 300 | ℃ | | 1 |+| Drain to Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS=0V,ID=250µA | 2 |+| Drain to Source Leakage Current | IDSS | | | 1 | µA | VDS = 60V,VGS=0V,Ta=25℃ | 2 |+| Drain to Source Leakage Current | IDSS | | | 250 | µA | VDS=48V,VGS=0V,Ta=125℃ | 2 |+| Gate to Source Forward Leakage | IGSS(F) | | | 1 | µA | VGS=+20V | 2 |+| Gate to Source Reverse Leakage | IGSS(R) | | | -1 | µA | VGS=-20V | 2 |+| Drain-to-Source On-Resistance | RDS(ON) | | 11 | 14 | mΩ | VGS=10V,ID=9A; pulse width tp≤380µs,δ≤2% | 2 |+| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS= VGS,ID=250µA; pulse width tp≤380µs,δ≤2% | 2 |+| Forward Transconductance | gfs | 25 | | | S | VDS=5V,ID=9A | 2 |+| Continuous Source Current (Body Diode) | IS | | | 9 | A | | 3 |+| Maximum Pulsed Current (Body Diode) | ISM | | | 36 | A | | 3 |+| Diode Forward Voltage | VSD | | | 1.5 | V | IS=9A,VGS=0V; pulse width tp≤380µs,δ≤2% | 3 |+| Junction-to-Ambient Thermal Resistance | RθJA | | 48 | | ℃/W | | 3 |+ ## CAD (KiCad official) - Symbol: `GL6009AS-8`
page.json+296−1@@ -178,6 +178,301 @@ "Package": "SOIC-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ff29a8116988637a",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Tc=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9,+ "conditions": "Tc=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.5,+ "conditions": "TC = 100 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "Tc=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Tc=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "a2: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy, Repetitive",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "a1: Repetitive rating; pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "a1: Repetitive rating; pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "a3: ISD=9A,di/dt≤100A/us,VDD≤BVDS,Start TJ=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.6,+ "conditions": "Tc=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Temperature for Soldering",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V,ID=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 60V,VGS=0V,Ta=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "VDS=48V,VGS=0V,Ta=125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Source Forward Leakage",+ "symbol": "IGSS(F)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS=+20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Source Reverse Leakage",+ "symbol": "IGSS(R)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VGS=-20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 11,+ "max": 14,+ "conditions": "VGS=10V,ID=9A; pulse width tp≤380µs,δ≤2%",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.7,+ "max": 2.5,+ "conditions": "VDS= VGS,ID=250µA; pulse width tp≤380µs,δ≤2%",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 25,+ "typ": null,+ "max": null,+ "conditions": "VDS=5V,ID=9A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Maximum Pulsed Current (Body Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "IS=9A,VGS=0V; pulse width tp≤380µs,δ≤2%",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 48,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -219,4 +514,4 @@ "visibility": { "public": true }-}+}