component
GC4D15120D
Public Made by Adomby adom
SUPSiC SiC Diodes, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GC4D15120D
SUPSiC · SiC Diodes · TO-247-3
GC4D15120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first diode leg (per-leg rating 1200 V VRRM, 12 A continuous at TC=135°C), with its cathode joined to pin 2 and the case. |
| 2 | K | passive | Common cathode of both diode legs, connected internally to the case (tab); device total 24 A at TC=135°C, 1200 V VRRM. |
| 3 | A2 | passive | Anode of the second diode leg (per-leg rating 1200 V VRRM, 12 A continuous at TC=135°C), with its cathode joined to pin 2 and the case. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | TC=25°C | 1 | ||
| Surge Peak Reverse Voltage | VRSM | 1300 | V | TC=25°C | 1 | ||
| DC Blocking Voltage | VDC | 1200 | V | TC=25°C | 1 | ||
| Continuous Forward Current (per leg) | IF | 24.5 | A | TC=25°C, per leg | 1 | ||
| Continuous Forward Current (per leg) | IF | 12 | A | TC=135°C, per leg | 1 | ||
| Continuous Forward Current (per leg) | IF | 7.5 | A | TC=157°C, per leg | 1 | ||
| Continuous Forward Current (device) | IF | 49 | A | TC=25°C, per device | 1 | ||
| Continuous Forward Current (device) | IF | 24 | A | TC=135°C, per device | 1 | ||
| Continuous Forward Current (device) | IF | 15 | A | TC=157°C, per device | 1 | ||
| Repetitive Peak Forward Surge Current | IFRM | 38 | A | TC=25°C, tP=10 ms, Half Sine Pulse | 1 | ||
| Repetitive Peak Forward Surge Current | IFRM | 25 | A | TC-110°C, tP=10 ms, Half Sine Pulse | 1 | ||
| Non-Repetitive Peak Forward Surge Current | IFSM | 66 | A | TC=25°C, tP=10 ms, Half Sine Pulse | 1 | ||
| Non-Repetitive Peak Forward Surge Current | IFSM | 49.5 | A | TC=110°C, tP=10 ms, Half Sine Pulse | 1 | ||
| Non-Repetitive Peak Forward Current | IF,Max | 600 | A | TC=25°C, tP=10 ms, Pulse | 1 | ||
| Non-Repetitive Peak Forward Current | IF,Max | 480 | A | TC=110°C, tP=10 ms, Pulse | 1 | ||
| Power Dissipation (per leg) | Ptot | 135 | W | TC=25°C, per leg | 1 | ||
| Power Dissipation (per leg) | Ptot | 58.5 | W | TC=110°C, per leg | 1 | ||
| Power Dissipation (device) | Ptot | 270 | W | TC=25°C, per device | 1 | ||
| Power Dissipation (device) | Ptot | 117 | W | TC=110°C, per device | 1 | ||
| Diode dV/dt ruggedness | dV/dt | 200 | V/ns | VR=0-960V | 1 | ||
| i2t value | ∫i2dt | 20.5 | A2s | TC=25°C, tP=10 ms | 1 | ||
| i2t value | ∫i2dt | 12.25 | A2s | TC=110°C, tP=10 ms | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Mounting Torque (M3 screw) | 1 | Nm | M3 Screw | 1 | |||
| Mounting Torque (6-32 screw) | 8.8 | lbf-in | 6-32 Screw | 1 | |||
| Forward Voltage | VF | 1.5 | 1.8 | V | IF = 8 A TJ=25°C | 2 | |
| Forward Voltage | VF | 2.2 | 3 | V | IF = 8 A TJ=175°C | 2 | |
| Reverse Current | IR | 35 | 100 | μA | VR = 1200 V TJ=25°C | 2 | |
| Reverse Current | IR | 250 | 350 | μA | VR = 1200 V TJ=175°C | 2 | |
| Total Capacitive Charge | QC | 37 | nC | VR = 800 V, IF = 8 A, di/dt = 200 A/μs, TJ = 25°C | 2 | ||
| Total Capacitance | C | 560 | pF | VR = 0 V, TJ = 25°C, f = 1 MHz | 2 | ||
| Total Capacitance | C | 37 | pF | VR = 400 V, TJ = 25°C, f = 1 MHz | 2 | ||
| Total Capacitance | C | 27 | pF | VR = 800 V, TJ = 25°C, f = 1 MHz | 2 | ||
| Capacitance Stored Energy | EC | 10.5 | μJ | VR = 800 V | 2 | ||
| Thermal Resistance Junction to Case (per leg) | RθJC | 1.11 | °C/W | Per Leg | 2 | ||
| Thermal Resistance Junction to Case (per device) | RθJC | 0.56 | °C/W | Per Device | 2 |
CAD (KiCad official)
- Symbol:
GC4D15120D - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
gc4d15120d-etched.step/gc4d15120d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gc4d15120d.step/gc4d15120d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SUPSiC datasheet (6 pp, sha256
0c397a56605cd320, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GC4D15120D
**SUPSiC** · SiC Diodes · TO-247-3
GC4D15120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first diode leg (per-leg rating 1200 V VRRM, 12 A continuous at TC=135°C), with its cathode joined to pin 2 and the case. |
| 2 | K | passive | Common cathode of both diode legs, connected internally to the case (tab); device total 24 A at TC=135°C, 1200 V VRRM. |
| 3 | A2 | passive | Anode of the second diode leg (per-leg rating 1200 V VRRM, 12 A continuous at TC=135°C), with its cathode joined to pin 2 and the case. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | | | 1200 | V | TC=25°C | 1 |
| Surge Peak Reverse Voltage | VRSM | | | 1300 | V | TC=25°C | 1 |
| DC Blocking Voltage | VDC | | | 1200 | V | TC=25°C | 1 |
| Continuous Forward Current (per leg) | IF | | | 24.5 | A | TC=25°C, per leg | 1 |
| Continuous Forward Current (per leg) | IF | | | 12 | A | TC=135°C, per leg | 1 |
| Continuous Forward Current (per leg) | IF | | | 7.5 | A | TC=157°C, per leg | 1 |
| Continuous Forward Current (device) | IF | | | 49 | A | TC=25°C, per device | 1 |
| Continuous Forward Current (device) | IF | | | 24 | A | TC=135°C, per device | 1 |
| Continuous Forward Current (device) | IF | | | 15 | A | TC=157°C, per device | 1 |
| Repetitive Peak Forward Surge Current | IFRM | | | 38 | A | TC=25°C, tP=10 ms, Half Sine Pulse | 1 |
| Repetitive Peak Forward Surge Current | IFRM | | | 25 | A | TC-110°C, tP=10 ms, Half Sine Pulse | 1 |
| Non-Repetitive Peak Forward Surge Current | IFSM | | | 66 | A | TC=25°C, tP=10 ms, Half Sine Pulse | 1 |
| Non-Repetitive Peak Forward Surge Current | IFSM | | | 49.5 | A | TC=110°C, tP=10 ms, Half Sine Pulse | 1 |
| Non-Repetitive Peak Forward Current | IF,Max | | | 600 | A | TC=25°C, tP=10 ms, Pulse | 1 |
| Non-Repetitive Peak Forward Current | IF,Max | | | 480 | A | TC=110°C, tP=10 ms, Pulse | 1 |
| Power Dissipation (per leg) | Ptot | | | 135 | W | TC=25°C, per leg | 1 |
| Power Dissipation (per leg) | Ptot | | | 58.5 | W | TC=110°C, per leg | 1 |
| Power Dissipation (device) | Ptot | | | 270 | W | TC=25°C, per device | 1 |
| Power Dissipation (device) | Ptot | | | 117 | W | TC=110°C, per device | 1 |
| Diode dV/dt ruggedness | dV/dt | | | 200 | V/ns | VR=0-960V | 1 |
| i2t value | ∫i2dt | | | 20.5 | A2s | TC=25°C, tP=10 ms | 1 |
| i2t value | ∫i2dt | | | 12.25 | A2s | TC=110°C, tP=10 ms | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Mounting Torque (M3 screw) | | | | 1 | Nm | M3 Screw | 1 |
| Mounting Torque (6-32 screw) | | | | 8.8 | lbf-in | 6-32 Screw | 1 |
| Forward Voltage | VF | | 1.5 | 1.8 | V | IF = 8 A TJ=25°C | 2 |
| Forward Voltage | VF | | 2.2 | 3 | V | IF = 8 A TJ=175°C | 2 |
| Reverse Current | IR | | 35 | 100 | μA | VR = 1200 V TJ=25°C | 2 |
| Reverse Current | IR | | 250 | 350 | μA | VR = 1200 V TJ=175°C | 2 |
| Total Capacitive Charge | QC | | 37 | | nC | VR = 800 V, IF = 8 A, di/dt = 200 A/μs, TJ = 25°C | 2 |
| Total Capacitance | C | | 560 | | pF | VR = 0 V, TJ = 25°C, f = 1 MHz | 2 |
| Total Capacitance | C | | 37 | | pF | VR = 400 V, TJ = 25°C, f = 1 MHz | 2 |
| Total Capacitance | C | | 27 | | pF | VR = 800 V, TJ = 25°C, f = 1 MHz | 2 |
| Capacitance Stored Energy | EC | | 10.5 | | μJ | VR = 800 V | 2 |
| Thermal Resistance Junction to Case (per leg) | RθJC | | 1.11 | | °C/W | Per Leg | 2 |
| Thermal Resistance Junction to Case (per device) | RθJC | | 0.56 | | °C/W | Per Device | 2 |
## CAD (KiCad official)
- Symbol: `GC4D15120D`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `gc4d15120d-etched.step` / `gc4d15120d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gc4d15120d.step` / `gc4d15120d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SUPSiC datasheet](docs/gc4d15120d-datasheet.pdf) (6 pp, sha256 `0c397a56605cd320`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gc4d15120d-datasheet.pdf)