component

GC4D15120D

Public Made by Adom

by adom

SUPSiC SiC Diodes, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) devicesgc4d15120dfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 10d ago
viewers gc4d15120d: viewers · Ray 10d ago
gc4d15120d-etched.glb Publish 0.1.0 · Ray 10d ago
gc4d15120d-etched.step gc4d15120d: factory component page (tier=lcsc) · Ray 10d ago
gc4d15120d-hero.glb gc4d15120d: hero GLB from the etched model (keeps the MPN mark) · Ray 10d ago
gc4d15120d-hero.overlay.json Publish 0.1.0 · Ray 10d ago
gc4d15120d.glb Publish 0.1.0 · Ray 10d ago
gc4d15120d.kicad_mod Publish 0.1.0 · Ray 10d ago
gc4d15120d.kicad_sym Publish 0.1.0 · Ray 10d ago
gc4d15120d.lbr Publish 0.1.0 · Ray 10d ago
gc4d15120d.step Publish 0.1.0 · Ray 10d ago
package.json Publish 0.1.0 · Ray 10d ago
page.json Set visibility: public · Ray 10d ago
README.md Publish 0.1.0 · Ray 10d ago

GC4D15120D

SUPSiC · SiC Diodes · TO-247-3

GC4D15120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first diode leg (per-leg rating 1200 V VRRM, 12 A continuous at TC=135°C), with its cathode joined to pin 2 and the case.
2 K passive Common cathode of both diode legs, connected internally to the case (tab); device total 24 A at TC=135°C, 1200 V VRRM.
3 A2 passive Anode of the second diode leg (per-leg rating 1200 V VRRM, 12 A continuous at TC=135°C), with its cathode joined to pin 2 and the case.

Key specifications

Parameter Value
Manufacturer SUPSiC
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 1200 V TC=25°C 1
Surge Peak Reverse Voltage VRSM 1300 V TC=25°C 1
DC Blocking Voltage VDC 1200 V TC=25°C 1
Continuous Forward Current (per leg) IF 24.5 A TC=25°C, per leg 1
Continuous Forward Current (per leg) IF 12 A TC=135°C, per leg 1
Continuous Forward Current (per leg) IF 7.5 A TC=157°C, per leg 1
Continuous Forward Current (device) IF 49 A TC=25°C, per device 1
Continuous Forward Current (device) IF 24 A TC=135°C, per device 1
Continuous Forward Current (device) IF 15 A TC=157°C, per device 1
Repetitive Peak Forward Surge Current IFRM 38 A TC=25°C, tP=10 ms, Half Sine Pulse 1
Repetitive Peak Forward Surge Current IFRM 25 A TC-110°C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Surge Current IFSM 66 A TC=25°C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Surge Current IFSM 49.5 A TC=110°C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Current IF,Max 600 A TC=25°C, tP=10 ms, Pulse 1
Non-Repetitive Peak Forward Current IF,Max 480 A TC=110°C, tP=10 ms, Pulse 1
Power Dissipation (per leg) Ptot 135 W TC=25°C, per leg 1
Power Dissipation (per leg) Ptot 58.5 W TC=110°C, per leg 1
Power Dissipation (device) Ptot 270 W TC=25°C, per device 1
Power Dissipation (device) Ptot 117 W TC=110°C, per device 1
Diode dV/dt ruggedness dV/dt 200 V/ns VR=0-960V 1
i2t value ∫i2dt 20.5 A2s TC=25°C, tP=10 ms 1
i2t value ∫i2dt 12.25 A2s TC=110°C, tP=10 ms 1
Operating Junction and Storage Temperature TJ, Tstg -55 175 °C 1
Mounting Torque (M3 screw) 1 Nm M3 Screw 1
Mounting Torque (6-32 screw) 8.8 lbf-in 6-32 Screw 1
Forward Voltage VF 1.5 1.8 V IF = 8 A TJ=25°C 2
Forward Voltage VF 2.2 3 V IF = 8 A TJ=175°C 2
Reverse Current IR 35 100 μA VR = 1200 V TJ=25°C 2
Reverse Current IR 250 350 μA VR = 1200 V TJ=175°C 2
Total Capacitive Charge QC 37 nC VR = 800 V, IF = 8 A, di/dt = 200 A/μs, TJ = 25°C 2
Total Capacitance C 560 pF VR = 0 V, TJ = 25°C, f = 1 MHz 2
Total Capacitance C 37 pF VR = 400 V, TJ = 25°C, f = 1 MHz 2
Total Capacitance C 27 pF VR = 800 V, TJ = 25°C, f = 1 MHz 2
Capacitance Stored Energy EC 10.5 μJ VR = 800 V 2
Thermal Resistance Junction to Case (per leg) RθJC 1.11 °C/W Per Leg 2
Thermal Resistance Junction to Case (per device) RθJC 0.56 °C/W Per Device 2

CAD (KiCad official)

  • Symbol: GC4D15120D
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: gc4d15120d-etched.step / gc4d15120d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gc4d15120d.step / gc4d15120d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SUPSiC datasheet (6 pp, sha256 0c397a56605cd320, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF