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docs g80n03k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
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README.md g80n03k: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 23d ago

G80N03K

GOFORD · MOSFETs · TO-252

G80N03K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Control terminal of the N-channel enhancement mode MOSFET. VGS(th) = 1.0-2.0V; maximum VGS = ±20V. Drive with VGS = 10V for RDS(on) < 4mΩ at ID = 25A.
2 D passive Drain. Also connected to the TO-252 tab (heat slug). Maximum VDS = 30V; continuous ID = 90A; pulsed IDM = 360A. Body diode anode is Source, cathode is Drain.
3 S passive Source. Reference terminal for VGS and VDS. Continuous body-diode current IS = 90A; body diode voltage VSD ≤ 1.2V at ISD = 25A, VGS = 0V.
4 D passive Drain (exposed thermal tab). Electrically identical to pin 2; serves as the primary heat-dissipation and drain-current path when soldered to a PCB copper pour.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • G80N03K

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1 1.5 2 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 3.2 4 mΩ VGS = 10V, ID = 25A 2
Drain-Source On-Resistance RDS(on) 5 7 mΩ VGS = 4.5V, ID = 25A 2
Continuous Body Diode Current IS 90 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 25A, VGS = 0V 2
Drain-Source Voltage VDS 30 V 1
Continuous Drain Current ID 90 A 1
Pulsed Drain Current (note 1) IDM 360 A 1
Gate-Source Voltage VGS -20 20 V 1
Power Dissipation PD 53.4 W 1
Single pulse avalanche energy (note 2) EAS 81 mJ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 2.34 ºC/W 1

CAD (KiCad official)

  • Symbol: G80N03K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: g80n03k-etched.step / g80n03k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g80n03k.step / g80n03k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (None pp, sha256 d53a44dcefed7f1b, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF