component
G80N03K
Public Made by Adomby adom
GOFORD MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownG80N03K
GOFORD · MOSFETs · TO-252
G80N03K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Control terminal of the N-channel enhancement mode MOSFET. VGS(th) = 1.0-2.0V; maximum VGS = ±20V. Drive with VGS = 10V for RDS(on) < 4mΩ at ID = 25A. |
| 2 | D | passive | Drain. Also connected to the TO-252 tab (heat slug). Maximum VDS = 30V; continuous ID = 90A; pulsed IDM = 360A. Body diode anode is Source, cathode is Drain. |
| 3 | S | passive | Source. Reference terminal for VGS and VDS. Continuous body-diode current IS = 90A; body diode voltage VSD ≤ 1.2V at ISD = 25A, VGS = 0V. |
| 4 | D | passive | Drain (exposed thermal tab). Electrically identical to pin 2; serves as the primary heat-dissipation and drain-current path when soldered to a PCB copper pour. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Ordering variants
Same part, different packaging or reel option.
G80N03K
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 3.2 | 4 | mΩ | VGS = 10V, ID = 25A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 5 | 7 | mΩ | VGS = 4.5V, ID = 25A | 2 | |
| Continuous Body Diode Current | IS | 90 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 25A, VGS = 0V | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Continuous Drain Current | ID | 90 | A | 1 | |||
| Pulsed Drain Current (note 1) | IDM | 360 | A | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 53.4 | W | 1 | |||
| Single pulse avalanche energy (note 2) | EAS | 81 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 50 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 2.34 | ºC/W | 1 |
CAD (KiCad official)
- Symbol:
G80N03K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
g80n03k-etched.step/g80n03k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g80n03k.step/g80n03k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (None pp, sha256
d53a44dcefed7f1b, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).