component
G80N03K
Public Made by Adomby adom
GOFORD MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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g80n03k: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+235
README.md+24@@ -28,6 +28,30 @@ Same part, different packaging or reel option. - `G80N03K` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | VGS = 0V, ID = 250µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 30V, VGS = 0V | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |+| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS = VGS, ID = 250µA | 2 |+| Drain-Source On-Resistance | RDS(on) | | 3.2 | 4 | mΩ | VGS = 10V, ID = 25A | 2 |+| Drain-Source On-Resistance | RDS(on) | | 5 | 7 | mΩ | VGS = 4.5V, ID = 25A | 2 |+| Continuous Body Diode Current | IS | | | 90 | A | TC = 25ºC | 2 |+| Body Diode Voltage | VSD | | | 1.2 | V | TJ = 25ºC, ISD = 25A, VGS = 0V | 2 |+| Drain-Source Voltage | VDS | | | 30 | V | | 1 |+| Continuous Drain Current | ID | | | 90 | A | | 1 |+| Pulsed Drain Current (note 1) | IDM | | | 360 | A | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Power Dissipation | PD | | | 53.4 | W | | 1 |+| Single pulse avalanche energy (note 2) | EAS | | | 81 | mJ | | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | | 1 |+| Thermal Resistance, Junction-to-Ambient | RthJA | | | 50 | ºC/W | | 1 |+| Maximum Junction-to-Case | RthJC | | | 2.34 | ºC/W | | 1 |+ ## CAD (KiCad official) - Symbol: `G80N03K`
page.json+211@@ -122,6 +122,217 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "4"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d53a44dcefed7f1b",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 30V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.5,+ "max": 2,+ "conditions": "VDS = VGS, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 3.2,+ "max": 4,+ "conditions": "VGS = 10V, ID = 25A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 5,+ "max": 7,+ "conditions": "VGS = 4.5V, ID = 25A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Body Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "TC = 25ºC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "TJ = 25ºC, ISD = 25A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (note 1)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 360,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 53.4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy (note 2)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 81,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "ºC",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": null,+ "max": 2.34,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [