# G6K8P15SE

**GOFORD** · MOSFETs · SOP-8

G6K8P15SE from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS rated -150V and continuous drain current -6A. |
| 2 | S | passive | Source of the P-channel MOSFET; VDS rated -150V and continuous drain current -6A. |
| 3 | S | passive | Source of the P-channel MOSFET; VDS rated -150V and continuous drain current -6A. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±20V with threshold -2V to -4V at ID = -250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V, ID -6A continuous and -24A pulsed. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V, ID -6A continuous and -24A pulsed. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V, ID -6A continuous and -24A pulsed. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V, ID -6A continuous and -24A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -150 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -6 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | -24 | A | note 1: repetitive rating, pulse width limited by max junction temperature | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Power Dissipation | PD |  |  | 3 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 22 | mJ | note 2: Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  |  | 42 | ºC/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -150 |  |  | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS = -150V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -10 |  | 10 | uA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -2 | -2.6 | -4 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 660 | 800 | mΩ | VGS = -10V, ID = -6A | 2 |
| Continuous Body Diode Current | IS |  |  | -6 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD |  |  | -1.2 | V | TJ = 25ºC, ISD = -6A, VGS = 0V | 2 |

## CAD (KiCad official)

- Symbol: `G6K8P15SE`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `g6k8p15se-etched.step` / `g6k8p15se-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g6k8p15se.step` / `g6k8p15se.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](docs/g6k8p15se-datasheet.pdf) (6 pp, sha256 `b81f2bbe9b92001e`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/g6k8p15se-datasheet.pdf)