component
G6K8P15SE
Public Made by Adomby adom
GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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G6K8P15SE
GOFORD · MOSFETs · SOP-8
G6K8P15SE from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS rated -150V and continuous drain current -6A. |
| 2 | S | passive | Source of the P-channel MOSFET; VDS rated -150V and continuous drain current -6A. |
| 3 | S | passive | Source of the P-channel MOSFET; VDS rated -150V and continuous drain current -6A. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±20V with threshold -2V to -4V at ID = -250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V, ID -6A continuous and -24A pulsed. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V, ID -6A continuous and -24A pulsed. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V, ID -6A continuous and -24A pulsed. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V, ID -6A continuous and -24A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -150 | V | 1 | |||
| Continuous Drain Current | ID | -6 | A | 1 | |||
| Pulsed Drain Current | IDM | -24 | A | note 1: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 3 | W | 1 | |||
| Single pulse avalanche energy | EAS | 22 | mJ | note 2: Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 42 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -150 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -150V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -10 | 10 | uA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -2 | -2.6 | -4 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 660 | 800 | mΩ | VGS = -10V, ID = -6A | 2 | |
| Continuous Body Diode Current | IS | -6 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -6A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
G6K8P15SE - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
g6k8p15se-etched.step/g6k8p15se-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g6k8p15se.step/g6k8p15se.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
b81f2bbe9b92001e, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).