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Ray Publish 0.1.0 b36ab69 16d ago

G3415LL

GOFORD · MOSFETs · SOT-23-6

G3415LL from GOFORD, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous ID of -4 A; shorted to pins 2, 5 and 6.
2 D passive Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous ID of -4 A; shorted to pins 1, 5 and 6.
3 G input Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±10 V and a threshold of -0.45 V to -1.1 V at ID = -250 µA.
4 S passive Source of the P-channel MOSFET; body diode continuous current is -4 A.
5 D passive Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous ID of -4 A; shorted to pins 1, 2 and 6.
6 D passive Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous ID of -4 A; shorted to pins 1, 2 and 5.

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Continuous Drain Current ID -4 A 1
Pulsed Drain Current IDM -16 A note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Gate-Source Voltage VGS -10 10 V 1
Power Dissipation PD 1.4 W 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 90 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -20V, VGS = 0V 2
Gate-Source Leakage IGSS -20 20 uA VGS = ±10V 2
Gate-Source Threshold Voltage VGS(th) -0.45 -0.7 -1.1 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 28 35 mΩ VGS = -4.5V, ID = -2A 2
Drain-Source On-Resistance RDS(on) 36 45 mΩ VGS = -2.5V, ID = -2A 2
Continuous Body Diode Current IS -4 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -2A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: G3415LL
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: g3415ll-etched.step / g3415ll-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g3415ll.step / g3415ll.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 132fa0a36ed971a0, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF