component
G3415LL
Public Made by Adomby adom
GOFORD MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG3415LL
GOFORD · MOSFETs · SOT-23-6
G3415LL from GOFORD, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous ID of -4 A; shorted to pins 2, 5 and 6. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous ID of -4 A; shorted to pins 1, 5 and 6. |
| 3 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±10 V and a threshold of -0.45 V to -1.1 V at ID = -250 µA. |
| 4 | S | passive | Source of the P-channel MOSFET; body diode continuous current is -4 A. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous ID of -4 A; shorted to pins 1, 2 and 6. |
| 6 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous ID of -4 A; shorted to pins 1, 2 and 5. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Continuous Drain Current | ID | -4 | A | 1 | |||
| Pulsed Drain Current | IDM | -16 | A | note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Power Dissipation | PD | 1.4 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 90 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -20 | 20 | uA | VGS = ±10V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -0.45 | -0.7 | -1.1 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 28 | 35 | mΩ | VGS = -4.5V, ID = -2A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 36 | 45 | mΩ | VGS = -2.5V, ID = -2A | 2 | |
| Continuous Body Diode Current | IS | -4 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -2A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
G3415LL - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
g3415ll-etched.step/g3415ll-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g3415ll.step/g3415ll.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
132fa0a36ed971a0, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).